特性
- Dual MOSFET Drives for Synchronous Rectified Bridge
- Advanced Adaptive Zero Shoot-Through Protection
- Body Diode Detection
- LGATE Detection
- Auto-zero of rDS(ON) Conduction Offset Effect
- Adjustable Gate Voltage for Optimal Efficiency
- 36V Internal Bootstrap Schottky Diode
- Bootstrap Capacitor Overcharging Prevention
- Supports High Switching Frequency (up to 1MHz)
- 6A LGATE Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
- Support 3.3V PWM Input logic
- Tri-State PWM Input for Safe Output Stage Shutdown
- Tri-State PWM Input Hysteresis for Applications with Power Sequencing Requirement
- Pre-POR Overvoltage Protection
- VCC Undervoltage Protection
- Expandable Bottom Copper PAD for Better Heat Spreading
- Dual Flat No-Lead (DFN) Package
- Near Chip-Scale Package Footprint; Improves PCB Efficiency and Thinner in Profile
- Pb-Free (RoHS Compliant)
描述
The ISL6615 is a high-speed MOSFET driver optimized to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. This driver, combined with an Intersil Digital or Analog multiphase PWM controller, forms a complete high frequency and high efficiency voltage regulator. The ISL6615 drives both upper and lower gates over a range of 4. 5V to 13. 2V. This drive-voltage provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses. The ISL6615 features 6A typical sink current for the low-side gate driver, enhancing the lower MOSFET gate hold-down capability during PHASE node rising edge, preventing power loss caused by the self turn-on of the lower MOSFET due to the high dV/dt of the switching node. An advanced adaptive zero shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize the dead time. The ISL6615 includes an overvoltage protection feature operational before VCC exceeds its turn-on threshold, at which the PHASE node is connected to the gate of the low side MOSFET (LGATE). The output voltage of the converter is then limited by the threshold of the low side MOSFET, which provides some protection to the load if the upper MOSFET(s) is shorted. The ISL6615 also features an input that recognizes a high-impedance state, working together with Intersil multiphase PWM controllers to prevent negative transients on the controlled output voltage when operation is suspended. This feature eliminates the need for the Schottky diode that may be utilized in a power system to protect the load from negative output voltage damage.
应用
- Optimized for POL DC/DC Converters for IBA Systems
- Core Regulators for Intel® and AMD® Microprocessors
- High Current Low-Profile DC/DC Converters
- High Frequency and High Efficiency VRM and VRD
- Synchronous Rectification for Isolated Power Supplies
| Part Number | Status | Samples | Stock | RoHS | Package | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pb (Lead) Free | Pb Free Category | Temp. Range (°C) |
|---|---|---|---|---|---|---|---|---|---|---|---|
| ISL6615CRZ | Obsolete | N/A | Out of Stock | Contact | DFN | 10# | Tube | 3 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | 0 to +70°C |
| ISL6615CRZ-T | Obsolete | N/A | Out of Stock | Contact | DFN | 10# | Reel | 3 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | 0 to +70°C |
| ISL6615IRZ | Obsolete | N/A | In Stock | RoHS:EN | DFN | 10# | Tube | 3 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C |
| ISL6615IRZ-T | Obsolete | N/A | Out of Stock | RoHS:EN | DFN | 10# | Reel | 3 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C |
- 产品变更通告英语PDF 326 KB 2021年5月21日
- 产品变更通告英语PDF 398 KB PCN15046 2016年1月07日
- 产品变更通告英语PDF 248 KB PCN10055 2010年6月30日
- 应用说明英语PDF 397 KB an1684 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- 应用说明英语PDF 509 KB an1681 2004年1月19日AI 生成的摘要: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- 应用说明英语PDF 576 KB an1116 2004年1月05日AI 生成的摘要: The document details various CMOS driver circuits including a self-powered DC stable 100V half bridge driver using EL7972 and EL7501, an IGBT half bridge driver with EL7981, and a self-oscillating IGBT driver operating at 25kHz. It also covers a 40W 12V synchronous step-down regulator using EL7761, a simple undervoltage lockout circuit using zener diodes, and a video sync pulse generator with EL7501. Additionally, it explains a resonant gate driver circuit that boosts gate voltage swing and improves efficiency by using external diodes and inductors.
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数据手册 (1)
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- 应用说明英语PDF 397 KB an1684 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- 应用说明英语PDF 509 KB an1681 2004年1月19日AI 生成的摘要: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- 应用说明英语PDF 576 KB an1116 2004年1月05日AI 生成的摘要: The document details various CMOS driver circuits including a self-powered DC stable 100V half bridge driver using EL7972 and EL7501, an IGBT half bridge driver with EL7981, and a self-oscillating IGBT driver operating at 25kHz. It also covers a 40W 12V synchronous step-down regulator using EL7761, a simple undervoltage lockout circuit using zener diodes, and a video sync pulse generator with EL7501. Additionally, it explains a resonant gate driver circuit that boosts gate voltage swing and improves efficiency by using external diodes and inductors.
应用说明和白皮书 (3)
- 产品变更通告英语PDF 326 KB 2021年5月21日
- 产品变更通告英语PDF 398 KB PCN15046 2016年1月07日
- 产品变更通告英语PDF 248 KB PCN10055 2010年6月30日
产品通告(产品变更、EOL 等) (4)
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