特性
- Dual MOSFET Drives for Synchronous Rectified Bridge
- Advanced Adaptive Zero Shoot-Through Protection
- 36V Internal Bootstrap Schottky Diode
- Advanced PWM Protocol (Patent Pending) to Support PSI Mode, Diode Emulation, Three-State Operation
- Diode Emulation For Enhanced Light Load Efficiency
- Bootstrap Capacitor Overcharging Prevention
- Supports High Switching Frequency
- 4A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
- VCC Undervoltage Protection
- Enable Input and Power-On Reset
- Expandable Bottom Copper Pad for Enhanced Heat Sinking
- DFN Package:
- Compliant to JEDEC PUB95 MO-220 DFN
- Dual Flat No Leads
- Package Outline
- Near Chip Scale Package Footprint, which Improves PCB Efficiency and has a Thinner Profile
- Pb-Free (RoHS Compliant)
描述
The ISL6620, ISL6620A is a high frequency MOSFET driver designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. The advanced PWM protocol of ISL6620, ISL6620A is specifically designed to work with Intersil VR11. 1 controllers and combined with N-Channel MOSFETs, form a complete core-voltage regulator solution for advanced microprocessors. When ISL6620, ISL6620A detects a PSI protocol sent by an Intersil VR11. 1 controller, it activates Diode Emulation (DE) operation; otherwise, it operates in normal Continuous Conduction Mode (CCM) PWM mode. The IC is biased by a single low voltage supply (5V), minimizing driving losses in high MOSFET gate capacitance and high switching frequency applications. Each driver is capable of driving a 3nF load with less than 10ns rise/fall time. Bootstrapping of the upper gate driver is implemented via an internal low forward drop diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-Channel MOSFETs. To further enhance light load efficiency, ISL6620, ISL6620A enables diode emulation operation during PSI mode. This allows Discontinuous Conduction Mode (DCM) by detecting when the inductor current reaches zero and subsequently turning off the low side MOSFET to prevent it from sinking current. An advanced adaptive shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize dead time. The ISL6620, ISL6620A has a 20kΩ integrated high-side gate-to-source resistor to prevent self turn-on due to high input bus dV/dt.
应用
- High Light Load Efficiency Voltage Regulators
- Core Regulators for Advanced Microprocessors
- High Current DC/DC Converters
- High Frequency and High Efficiency VRM and VRD
| Part Number | Status | Samples | Stock | RoHS | Package | Lead Count (#) | Carrier Type | Pitch (mm) | Pkg. Dimensions (mm) | Pb (Lead) Free | Temp. Range (°C) |
|---|---|---|---|---|---|---|---|---|---|---|---|
| ISL6620ACBZ | Obsolete | N/A | Out of Stock | Contact | SOIC | 8# | Tube | 1.3mm | 4.9 x 3.9 x 0.00 | No | 0 to +70°C |
| ISL6620ACBZ-T | Obsolete | N/A | Out of Stock | Contact | SOIC | 8# | Reel | 1.3mm | 4.9 x 3.9 x 0.00 | No | 0 to +70°C |
| ISL6620ACRZ | Obsolete | N/A | Out of Stock | RoHS:EN | DFN | 10# | Tube | 0.5mm | 3.0 x 3.0 x 0.90 | No | 0 to +70°C |
| ISL6620ACRZ-T | Obsolete | N/A | Out of Stock | RoHS:EN | DFN | 10# | Reel | 0.5mm | 3.0 x 3.0 x 0.90 | No | 0 to +70°C |
- 产品咨询英语PDF 106 KB PA16061 2016年6月08日
- 产品变更通告英语PDF 398 KB PCN15046 2016年1月07日
- 产品变更通告英语PDF 108 KB PCN12068 2012年8月21日
- 应用说明英语PDF 397 KB an1684 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- 应用说明英语PDF 509 KB an1681 2004年1月19日AI 生成的摘要: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- 应用说明英语PDF 576 KB an1116 2004年1月05日AI 生成的摘要: The document details various CMOS driver circuits including a self-powered DC stable 100V half bridge driver using EL7972 and EL7501, an IGBT half bridge driver with EL7981, and a self-oscillating IGBT driver operating at 25kHz. It also covers a 40W 12V synchronous step-down regulator using EL7761, a simple undervoltage lockout circuit using zener diodes, and a video sync pulse generator with EL7501. Additionally, it explains a resonant gate driver circuit that boosts gate voltage swing and improves efficiency by using external diodes and inductors.
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- 应用说明英语PDF 397 KB an1684 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- 应用说明英语PDF 509 KB an1681 2004年1月19日AI 生成的摘要: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- 应用说明英语PDF 576 KB an1116 2004年1月05日AI 生成的摘要: The document details various CMOS driver circuits including a self-powered DC stable 100V half bridge driver using EL7972 and EL7501, an IGBT half bridge driver with EL7981, and a self-oscillating IGBT driver operating at 25kHz. It also covers a 40W 12V synchronous step-down regulator using EL7761, a simple undervoltage lockout circuit using zener diodes, and a video sync pulse generator with EL7501. Additionally, it explains a resonant gate driver circuit that boosts gate voltage swing and improves efficiency by using external diodes and inductors.
应用说明和白皮书 (3)
- 产品咨询英语PDF 106 KB PA16061 2016年6月08日
- 产品变更通告英语PDF 398 KB PCN15046 2016年1月07日
- 产品变更通告英语PDF 108 KB PCN12068 2012年8月21日
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