封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | |
| Pkg. Code: | |
| Lead Count (#): | |
| Pkg. Dimensions (mm): | 0.0 x 0.0 x 0.00 |
| Pitch (mm): |
环境和出口类别
| Pb (Lead) Free | No |
| ECCN (US) | 9A515.e.1 |
| HTS (US) | 8542.39.0090 |
| Moisture Sensitivity Level (MSL) |
产品属性
| Carrier Type | Die Waffle Pack |
| Pkg. Dimensions (mm) | 0.0 x 0.0 x 0.00 |
| Qualification Level | EM |
| Pb (Lead) Free | No |
| Pb Free Category | Not Applicable |
| MOQ | 5 |
| Temp. Range (°C) | -55 to +125°C |
| CAGE code | 34371 |
| DSEE (MeV·cm2/mg) | 86 |
| Die Sale Availability? | Yes |
| Flow | RH Hermetic |
| IDS (A) | 60 |
| Models Available | SPICE |
| PROTO Availability? | Yes |
| Qg typ (nC) | 2.5 |
| RDSON (Typ) (mΩ) | 5 |
| Rating | Space |
| TID HDR (krad(Si)) | 100 |
| TID LDR (krad(Si)) | 75 |
| Thermal Resistance θJC (°C/W) | 3.1 |
| VDS (V) | 100 |
| VGS (Max) (V) | 6 |
| VGS(TH) (Max) (V) | 2.5 |
有关 ISL70023SEH 的资源
描述
The ISL70023SEH and ISL73023SEH are 100V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for these devices include commercial aerospace, medical, and nuclear power generation. GaN's exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size. By combining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for high reliability applications.