概览
Renesas Hi-Rel discrete devices provide radiation-tolerant, high-efficiency power-switching solutions for mission-critical space and high-reliability applications. Our portfolio includes discrete GaN FETs and GaN-based power stages, delivering exceptional efficiency, fast switching speeds, and high power density for power conversion, motor control, and high-speed switching applications. Designed to withstand SEE and TID effects, these GaN solutions enable compact, lightweight, and highly efficient power designs, ensuring reliable operation in the harshest aerospace and defense environments.
Manufacturing & Test Information
Renesas has an unparalleled track record of providing highly reliable, efficient, and accurate space-grade products for a wide range of applications, including satellite communications and space flight systems.
Total ionizing dose (TID) response is a key issue for semiconductors in space applications. We address this by performing radiation lot acceptance testing (RLAT) on all space-grade products. For rad-hard products, we perform low dose rate and/or high dose rate RLAT on a wafer-by-wafer basis. For rad-tolerant products, we perform low dose rate RLAT on a per-wafer-lot basis. We design our space products to handle heavy ion interactions with minimal disruption to operation while mitigating single event effects (SEE)—including single event transients (SET), upsets (SEU), and destructive events like burnout and latch-up (SEB/L).
Our rad-hard hermetic and plastic products follow MIL-PRF-38535/QML qualified production flows and are 100% burned-in to ensure the highest reliability. We use an automotive-like production flow to produce rad-tolerant space plastic products, delivering robust, cost-sensitive solutions for new space applications. By leveraging the latest technology, our QML Class V, QML Class P, QML Class Q, and radiation-tolerant space plastic products are revolutionizing the Hi-Rel and space marketplaces.