Hi-Rel GaN FETs provide high-efficiency, radiation-tolerant power switching for mission-critical space and high-reliability applications. While GaN technology inherently offers radiation resilience, our specialized screening and qualification processes ensure reliable performance in extreme environments. With fast switching speeds, low Rds(on), and superior power density, these FETs enable compact, lightweight, and highly efficient power solutions for DC/DC conversion, motor control, and RF applications in space systems.
Renesas offers products across many screening flows: QML-V, QML-V Equivalent, QML-P, QML-P Equivalent, JANS, and RT Plastic. Refer to the product datasheet to determine which flows are applicable.
High-Speed, Efficient Switching
Fast switching speeds and low Rds(on) enable high-efficiency power conversion, reducing conduction losses and improving overall system performance.
Compact, High-Power Density
Delivers greater power handling in a smaller footprint, allowing for lightweight, space-saving power system designs critical for aerospace applications.
Radiation Assurance for Space
GaN FETs offer natural radiation resilience, and our rigorous screening and qualification provide added assurance for spaceborne reliability.
