封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | CFP |
| Pkg. Code: | KDC |
| Lead Count (#): | 28 |
| Pkg. Dimensions (mm): | 17.78 x 12.70 x 0.00 |
| Pitch (mm): | 1.27 |
环境和出口类别
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Pb (Lead) Free | _none |
| ECCN (US) | 9A515.e.1 |
| HTS (US) | 8542.39.0090 |
产品属性
| Lead Count (#) | 28 |
| Carrier Type | Tray |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Qualification Level | EM |
| Pb (Lead) Free | _none |
| Pb Free Category | Gold Plate over compliant Undercoat-e4 |
| MOQ | 1 |
| Temp. Range (°C) | -55 to +125°C |
| CAGE code | 34371 |
| Die Sale Availability? | Yes |
| Flow | RH Hermetic |
| IOUT (A) | 1 |
| IOUT (Max) (mA) | 1000 |
| Length (mm) | 17.8 |
| Models Available | PSPICE |
| Output Options | Adjustable |
| Output Voltage (Max) (V) | -26 |
| Output Voltage (Min) (V) | -2.25 |
| PROTO Availability? | Yes |
| Pitch (mm) | 1.3 |
| Pkg. Dimensions (mm) | 17.8 x 12.7 x 0.00 |
| Pkg. Type | CFP |
| Rating | Space |
| SMD URL | 5962-02503 |
| Supply Voltage (max) (V) | -3 - -3 |
| Supply Voltage (min) (V) | -30 - -30 |
| TID HDR (krad(Si)) | 300 |
| TID LDR (krad(Si)) | Report Available |
| VDO @ IOUTMAX (Typ) (mV) | 1000 |
| VOUT (max) (V) | -2.25 |
| VOUT (min) (V) | -26 |
| Width (mm) | 12.7 |
有关 ISL72991RH 的资源
描述
Radiation Hardened Low Dropout Adjustable Negative Voltage Regulator The radiation hardened ISL72991RH is a low dropout adjustable negative regulator with an output voltage range of -2.25V to -26V. The device features a 1A output current capability, an adjustable current limit pin (ILIM), and a shutdown pin (SD) for easy on/off control. The device incorporates unique circuitry that enables precision performance across the -55 °C to +125 °C temperature range and post-irradiation. Specifications across the full temperature range include an internal reference voltage of -1.25V +40mV/- 50mV (maximum), line regulation of ±25mV (maximum), and load regulation of ±15mV (maximum). The reference voltage is the ADJ to GND voltage. Constructed with the Intersil dielectrically isolated Rad Hard Silicon Gate (RSG) BiCMOS process, these devices are immune to single event latch-up and have been specifically designed to provide highly reliable performance in harsh radiation environments.