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ISL73041SEH

有效

Radiation Hardened 12V Half-Bridge GaN FET Driver

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特性

  • Up to 20V bootstrap voltage half-bridge driver
  • Programmable 4.5V to 5.5V gate drive voltage
  • Single tri-level PWM input control
  • Separate source and sink driver outputs for independent gate turn-on and turn-off control
  • High-side peak driver current: 5A
  • Low-side peak driver current: 10A
  • Separate high-side and low-side programmable dead time control
  • Fast propagation delay with low mismatch
  • Full military temperature operation -55°C to 125°C ambient range
  • 16 Ld hermetic CLCC package
查找Hi-Rel GaN FET Drivers的其他产品
ISL73041SEH Block Diagram

描述

The ISL73041SEH is a PWM input 12V half-bridge GaN FET driver designed to drive low rDS(ON), high QGS enhance mode Gallium Nitride (eGaN) FETs up to 1.5MHz operation for DC/DC switching regulators. An integrated programmable GaN FET gate drive voltage, high-side bootstrap switch, and high gate drive current provide a compact and robust GaN FET half-bridge driver.

The ISL73041SEH is designed to interface directly to the ISL73847SEH dual-phase PWM buck controller to create a high-efficiency point-of-load regulator to power many of the latest low-voltage high-current FPGA and DSP digital core rails.

The ISL73041SEH is offered in a 16 Ld Ceramic Leadless Chip Carrier (CLCC) hermetic package. It is specified to operate across an ambient temperature range of -55°C to +125°C.

产品参数

属性 值
Rating Space
Bus Voltage (Max) (V) 12
Driver Type Half Bridge
FET Type GaNFET
High Side Rise Time (max) (ns) 29
High Side Fall Time (max) (ns) 26
Input VCC (Min) (V) 4.75
Input VCC (Max) (V) 13.2
Low Side Rise Time (max) (ns) 36
Low Side Fall Time (max) (ns) 30
Drivers (#) 2
Output Type Synchronous
Peak Output Source Current (A) 2 (HS) /4 (LS)
Peak Output Sink Current (A) 4 (HS) /8 (LS)
Gate Drive (V) 4.5
Temp. Range (°C) -55 to +125°C
TID LDR (krad(Si)) 75
DSEE (MeV·cm2/mg) 86
Flow RH Hermetic
Qualification Level Class Ve, EM
Die Sale Availability? Yes
PROTO Availability? Yes

封装选项

Pkg. Type Pkg. Dimensions (mm) Lead Count (#) Pitch (mm)
CLCC 7.6 x 7.6 x 1.52 16 1.3
DIE — — —

应用方框图

Radiation Hardened Versal Power Tree Block Diagram
抗辐射 Versal 电源树
一款采用 AMD Versal 的卫星应用抗辐射电源。

其他应用

  • High current DC/DC Point-of-Load (POL) for FPGA and DSP supply rails
  • 12V to 1V POL regulation
  • GaN FET motor drivers

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新闻和博客

新闻
2023年7月19日
Renesas Develops Complete Power Management Solution for AMD Space-Grade Versal Adaptive SoC
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