概览
描述
The ISL73041SEH is a PWM input 12V half-bridge GaN FET driver designed to drive low rDS(ON), high QGS enhance mode Gallium Nitride (eGaN) FETs up to 1.5MHz operation for DC/DC switching regulators. An integrated programmable GaN FET gate drive voltage, high-side bootstrap switch, and high gate drive current provide a compact and robust GaN FET half-bridge driver.
The ISL73041SEH is designed to interface directly to the ISL73847SEH dual-phase PWM buck controller to create a high-efficiency point-of-load regulator to power many of the latest low-voltage high-current FPGA and DSP digital core rails.
The ISL73041SEH is offered in a 16 Ld Ceramic Leadless Chip Carrier (CLCC) hermetic package. It is specified to operate across an ambient temperature range of -55 °C to +125 °C.
特性
- Up to 20V bootstrap voltage half-bridge driver
- Programmable 4.5V to 5.5V gate drive voltage
- Single tri-level PWM input control
- Separate source and sink driver outputs for independent gate turn-on and turn-off control
- High-side peak driver current: 5A
- Low-side peak driver current: 10A
- Separate high-side and low-side programmable dead time control
- Fast propagation delay with low mismatch
- Full military temperature operation -55 °C to 125 °C ambient range
- 16 Ld hermetic CLCC package
产品对比
应用
文档
|
|
|
|
|---|---|---|
| 类型 | 文档标题 | 日期 |
| 数据手册 | PDF 1.59 MB | |
| 报告 | PDF 5.95 MB | |
| 技术摘要 | PDF 340 KB | |
| 报告 | PDF 547 KB | |
| 报告 | PDF 549 KB | |
| 应用说明 | PDF 1.13 MB | |
| 应用说明 | PDF 224 KB | |
7 项目
|
||
