概览
描述
The ISL73444SEH features four low-power amplifiers optimized to provide maximum dynamic range. This operational amplifier (op amp) features a unique combination of rail-to-rail operation on the input and output as well as a slew-enhanced front-end that provides ultra-fast slew rates positively proportional to a given step size, thereby increasing accuracy under transient conditions, whether it's periodic or momentary. The ISL73444SEH also offers low power, low offset voltage, and low-temperature drift, making it ideal for applications requiring both high DC accuracy and AC performance. With <5µs recovery for Single Event Transients (SET) (LETTH = 86.4MeV•cm2/mg), the number of filtering components needed is drastically reduced. The ISL73444SEH is also immune to single event latch-up because it is fabricated using the Renesas proprietary PR40 Silicon On Insulator (SOI) process. The amplifier is designed to operate over a single supply range of 2.7V to 40V or a split supply voltage range of ±1.35V to ±20V. Applications for this amplifier include precision instrumentation, data acquisition, precision power supply controls, and process controls. The ISL73444SEH is available in a 14 Ld hermetic ceramic flatpack and die forms that operate across the temperature range of -55 °C to +125 °C.
特性
- Electrically screened to DLA SMD# 5962-13214
- Acceptance tested to 50krad(Si) (LDR) wafer-by-wafer
- <5µs recovery from SEE (LETTH = 86.4MeV•cm2/mg)
- Unity gain stable
- Rail-to-rail input and output
- Wide gain bandwidth product: 19MHz
- Wide single and dual supply range: 2.7V to 40V max
- Low input offset voltage: 400µV
- Low current consumption (per amplifier): 1.1mA, typ.
- No phase reversal with input overdrive
- Slew rate - Large signal: 60V/µs
- Operating temperature range: -55 °C to +125 °C
- Radiation acceptance (see TID report) - Low dose rate (0.01rad(Si)/s): 50krad(Si)
- SEE hardness (see SEE report for details)
- SEB LETTH (VS = ±21V): 86.4MeV•cm2/mg
- SEL immune (SOI Process)
