特性
- High Efficiency Synchronous Buck Regulator with Up to 95% Efficiency
- 2.7V to 5.5V Supply Voltage
- 1.2A Output Current
- 100% Maximum Duty Cycle
- Peak Current Limiting, Short Circuit Protection
- 200ms Power-On Reset
- 3% Output Accuracy Over-Temperature/Load/Line
- Less than 1µA Logic Controlled Shutdown Current
- Internal Loop Compensation
- Internal Digital Soft-Start
- Over-Temperature Protection
- Enable
- Small 10 Ld 3mmx3mm DFN
- Pb-Free (RoHS Compliant)
ISL8011 Functional Diagram
描述
ISL8011 is an integrated FET, 1.2A synchronous buck regulator for general purpose point-of load applications. It is optimized for generating low output voltages down to 0.8V. The supply voltage range is from 2.7V to 5.5V allowing the use from common 3.3V or 5V supply rails and Lithium ion battery inputs. It has guaranteed minimum output current of 1.2A. 1.5MHz pulse-width modulation (PWM) switching frequency allowing the use of small external components. The ISL8011 includes a pair of low ON-resistance P-Channel and N-Channel internal MOSFETs to maximize efficiency and minimize external component count. 100% duty-cycle operation allows less than 200mV dropout voltage at 1.2A. The ISL8011 offers a 200ms Power-On-Reset (POR) timer at power-up. When shutdown, the ISL8011 discharges the output capacitor. Other features include internal digital soft-start, enable for power sequence, overcurrent protection, and thermal shutdown. The ISL8011 is offered in a 10 Ld 3mmx3mm DFN package with 1mm maximum height. The complete converter occupies less than 1cm2 area.
应用
- DC/DC POL Modules
- µC/µP, FPGA and DSP Power
- Plug-in DC/DC Modules for Routers and Switchers
- Portable Instruments
- Test and Measurement Systems
| Part Number | Status | Samples | Stock | RoHS | Package | Carrier Type |
|---|---|---|---|---|---|---|
| ISL8011IRZ | Obsolete | N/A | In Stock | RoHS:EN | DFN | Tube |
| ISL8011IRZ-T | Obsolete | N/A | Out of Stock | RoHS:EN | DFN | Reel |
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- 产品变更通告英语PDF 326 KB 2021年5月21日
- 应用说明英语PDF 592 KB an9208 2018年2月01日AI 生成的摘要: The document discusses high frequency power converters, focusing on ZVS-QRC and multi-resonant topologies that reduce switching losses by operating switches at zero voltage. It highlights challenges like EMI and high voltage stress. The SEPIC converter is introduced, explaining its ability to buck or boost voltage without polarity inversion. The document details SEPIC’s operating modes, voltage-current relationships, and the importance of inductor values for continuous or discontinuous conduction modes.
- 应用说明英语PDF 397 KB an1684 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- 应用说明英语PDF 509 KB an1681 2004年1月19日AI 生成的摘要: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- 应用说明英语PDF 1.56 MB an1209 2004年1月19日AI 生成的摘要: The document details Intersil Integrated FET DC/DC converters, highlighting various models with their voltage ranges, output currents, switching frequencies, and package types. It explains the simplified buck regulator schematic, emphasizing ease of design with only four external components and internal FETs optimized for performance. Features include synchronous rectification for high efficiency, ceramic capacitor compatibility, small form factor, improved thermal performance, 100% duty cycle operation, internal loop compensation, external frequency synchronization for EMI reduction, and advanced control functions like UVLO, overcurrent, and thermal protection.
- 应用说明英语PDF 650 KB an9210 2001年12月21日AI 生成的摘要: This document presents a new PSPICE subcircuit model for power MOSFETs with global temperature options. It details synchronous rectifier circuit operation, including gate biasing and conduction modes. The model accurately simulates switching waveforms, diode recovery, and temperature-dependent efficiency. Measured and modeled data show excellent correlation for output characteristics, threshold voltage, breakdown voltage, and on-resistance across temperature ranges. Limitations in linear mode modeling are noted due to PSPICE assumptions.
- 应用说明英语PDF 387 KB an9209 1998年8月13日AI 生成的摘要: The document presents an empirical SPICE-2 subcircuit model for power MOSFETs, accurately simulating static and dynamic behaviors including first and third-quadrant operations and avalanche breakdown. The model aligns closely with measured data and is compatible with all SPICE versions without code modification. It uses parameters derived from datasheets or simple measurements. The document also includes detailed comparisons of measured and calculated curves for transfer, output, switching, and diode recovery characteristics. Additionally, it provides legal and usage disclaimers from Renesas Electronics.
- 应用说明英语PDF 349 KB an7244 1998年8月12日AI 生成的摘要: Power MOSFETs feature a positive temperature coefficient of resistance, enhancing stability and preventing thermal runaway by increasing resistance as temperature rises. Their gate terminals have extremely high input impedance with minimal leakage current, dominated by capacitive characteristics. Switching speed depends on gate resistance and capacitance, with polysilicon gates offering higher resistance and lower frequency operation than metal gates. MOSFETs require a gate-to-source voltage exceeding a threshold (around 2V) and typically about 10V to fully saturate and deliver maximum drain current. TTL and CMOS drivers differ in voltage capability and switching speed, often requiring buffering for optimal performance.
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- 应用说明英语PDF 592 KB an9208 2018年2月01日AI 生成的摘要: The document discusses high frequency power converters, focusing on ZVS-QRC and multi-resonant topologies that reduce switching losses by operating switches at zero voltage. It highlights challenges like EMI and high voltage stress. The SEPIC converter is introduced, explaining its ability to buck or boost voltage without polarity inversion. The document details SEPIC’s operating modes, voltage-current relationships, and the importance of inductor values for continuous or discontinuous conduction modes.
- 应用说明英语PDF 397 KB an1684 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- 应用说明英语PDF 509 KB an1681 2004年1月19日AI 生成的摘要: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- 应用说明英语PDF 1.56 MB an1209 2004年1月19日AI 生成的摘要: The document details Intersil Integrated FET DC/DC converters, highlighting various models with their voltage ranges, output currents, switching frequencies, and package types. It explains the simplified buck regulator schematic, emphasizing ease of design with only four external components and internal FETs optimized for performance. Features include synchronous rectification for high efficiency, ceramic capacitor compatibility, small form factor, improved thermal performance, 100% duty cycle operation, internal loop compensation, external frequency synchronization for EMI reduction, and advanced control functions like UVLO, overcurrent, and thermal protection.
- 应用说明英语PDF 650 KB an9210 2001年12月21日AI 生成的摘要: This document presents a new PSPICE subcircuit model for power MOSFETs with global temperature options. It details synchronous rectifier circuit operation, including gate biasing and conduction modes. The model accurately simulates switching waveforms, diode recovery, and temperature-dependent efficiency. Measured and modeled data show excellent correlation for output characteristics, threshold voltage, breakdown voltage, and on-resistance across temperature ranges. Limitations in linear mode modeling are noted due to PSPICE assumptions.查看更多 (7)
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