特性
- 10A Continuous Output Current
- 2.97V to 5.5V Input Voltage Range
- Up to 95% Efficiency
- Full Power Operation in +90°C Ambient without Airflow
- R4™ Control Architecture Delivers Excellent Transient Response Without Compensation
- Pin Selectable Output Voltage Programming
- ±0.6% Output Voltage Accuracy Over Full Operating Temperature Range
- Programmable Enhanced Light-Load Efficiency Operation
- Output Voltage Margining and Power-good Monitor
- Small 6mmx4mm QFN Package
ISL95210 Functional Diagram
描述
The ISL95210 is a high-efficiency step-down regulator that can deliver 10A of output current from a 5V input. The small 4mmx6mm QFN package and only four external components provide a very small total solution size. Low resistance internal MOSFETs deliver excellent efficiency and permit full power operation in a +90°C ambient without airflow. The regulator operates from an input voltage of 2. 97V to 5. 5V, and provides a 0. 6% accurate output voltage over the full operating temperature range. Intersil's patented R4™ control architecture provides exceptional transient response with no external compensation components. The output voltage may be programmed by an internal DAC or by an external resistor divider (see Output Voltage Programming on page 11 for more details). Several digital control signals provide flexibility for users that want additional features. Switching frequency, switching mode, output voltage margining and daisy-chained power-good functions are all programmed by these pins. The ISL95210 also includes comprehensive internal protection for overvoltage, undervoltage, overcurrent and over-temperature conditions.
应用
- Point-of-Load Power Supplies
- Notebook Computer Power
- General Purpose Power Rail Generation
| Part Number | Status | Samples | Stock | RoHS | Package | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pb (Lead) Free | Pb Free Category | Temp. Range (°C) |
|---|---|---|---|---|---|---|---|---|---|---|---|
| ISL95210HRZ | Obsolete | N/A | Out of Stock | RoHS:EN | QFN | 32# | Tube | 3 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -10 to +100°C |
| ISL95210HRZ-T | Obsolete | N/A | In Stock | RoHS:EN | QFN | 32# | Reel | 3 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -10 to +100°C |
| ISL95210HRZ-T7A | Obsolete | N/A | In Stock | RoHS:EN | QFN | 32# | Reel | 3 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -10 to +100°C |
| ISL95210IRZ | Obsolete | N/A | Out of Stock | RoHS:EN | QFN | 32# | Tube | 3 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C |
| ISL95210IRZ-T | Obsolete | N/A | Out of Stock | RoHS:EN | QFN | 32# | Reel | 3 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C |
| ISL95210IRZ-T7A | Obsolete | N/A | In Stock | RoHS:EN | QFN | 32# | Reel | 3 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C |
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- 应用说明英语PDF 592 KB an9208 2018年2月01日AI 生成的摘要: The document discusses high frequency power converters, focusing on ZVS-QRC and multi-resonant topologies that reduce switching losses by operating switches at zero voltage. It highlights challenges like EMI and high voltage stress. The SEPIC converter is introduced, explaining its ability to buck or boost voltage without polarity inversion. The document details SEPIC’s operating modes, voltage-current relationships, and the importance of inductor values for continuous or discontinuous conduction modes.
- 产品变更通告英语PDF 135 KB PCN12084 2012年10月15日
- 产品变更通告英语PDF 248 KB PCN10055 2010年6月30日
- 应用说明英语PDF 397 KB an1684 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- 应用说明英语PDF 509 KB an1681 2004年1月19日AI 生成的摘要: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- 应用说明英语PDF 650 KB an9210 2001年12月21日AI 生成的摘要: This document presents a new PSPICE subcircuit model for power MOSFETs with global temperature options. It details synchronous rectifier circuit operation, including gate biasing and conduction modes. The model accurately simulates switching waveforms, diode recovery, and temperature-dependent efficiency. Measured and modeled data show excellent correlation for output characteristics, threshold voltage, breakdown voltage, and on-resistance across temperature ranges. Limitations in linear mode modeling are noted due to PSPICE assumptions.
- 应用说明英语PDF 387 KB an9209 1998年8月13日AI 生成的摘要: The document presents an empirical SPICE-2 subcircuit model for power MOSFETs, accurately simulating static and dynamic behaviors including first and third-quadrant operations and avalanche breakdown. The model aligns closely with measured data and is compatible with all SPICE versions without code modification. It uses parameters derived from datasheets or simple measurements. The document also includes detailed comparisons of measured and calculated curves for transfer, output, switching, and diode recovery characteristics. Additionally, it provides legal and usage disclaimers from Renesas Electronics.
- 应用说明英语PDF 349 KB an7244 1998年8月12日AI 生成的摘要: Power MOSFETs feature a positive temperature coefficient of resistance, enhancing stability and preventing thermal runaway by increasing resistance as temperature rises. Their gate terminals have extremely high input impedance with minimal leakage current, dominated by capacitive characteristics. Switching speed depends on gate resistance and capacitance, with polysilicon gates offering higher resistance and lower frequency operation than metal gates. MOSFETs require a gate-to-source voltage exceeding a threshold (around 2V) and typically about 10V to fully saturate and deliver maximum drain current. TTL and CMOS drivers differ in voltage capability and switching speed, often requiring buffering for optimal performance.
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- 应用说明英语PDF 592 KB an9208 2018年2月01日AI 生成的摘要: The document discusses high frequency power converters, focusing on ZVS-QRC and multi-resonant topologies that reduce switching losses by operating switches at zero voltage. It highlights challenges like EMI and high voltage stress. The SEPIC converter is introduced, explaining its ability to buck or boost voltage without polarity inversion. The document details SEPIC’s operating modes, voltage-current relationships, and the importance of inductor values for continuous or discontinuous conduction modes.
- 应用说明英语PDF 397 KB an1684 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- 应用说明英语PDF 509 KB an1681 2004年1月19日AI 生成的摘要: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- 应用说明英语PDF 650 KB an9210 2001年12月21日AI 生成的摘要: This document presents a new PSPICE subcircuit model for power MOSFETs with global temperature options. It details synchronous rectifier circuit operation, including gate biasing and conduction modes. The model accurately simulates switching waveforms, diode recovery, and temperature-dependent efficiency. Measured and modeled data show excellent correlation for output characteristics, threshold voltage, breakdown voltage, and on-resistance across temperature ranges. Limitations in linear mode modeling are noted due to PSPICE assumptions.
- 应用说明英语PDF 387 KB an9209 1998年8月13日AI 生成的摘要: The document presents an empirical SPICE-2 subcircuit model for power MOSFETs, accurately simulating static and dynamic behaviors including first and third-quadrant operations and avalanche breakdown. The model aligns closely with measured data and is compatible with all SPICE versions without code modification. It uses parameters derived from datasheets or simple measurements. The document also includes detailed comparisons of measured and calculated curves for transfer, output, switching, and diode recovery characteristics. Additionally, it provides legal and usage disclaimers from Renesas Electronics.查看更多 (6)
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- 产品变更通告英语PDF 135 KB PCN12084 2012年10月15日
- 产品变更通告英语PDF 248 KB PCN10055 2010年6月30日
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