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特性

  • Super low on-state resistance RDS(on)1 = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) RDS(on)2 = 2.2 mΩ TYP. / 5.4 mΩ MAX. (VGS = 4.5 V, ID = 80 A)
  • High Current Rating ID(DC) = ±160 A
  • Logic level drive type

描述

Support is limited to customers who have already adopted these products.

The NP160N04TDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

产品参数

属性
Qualification LevelAutomotive
Nch/PchNch
Channels (#)1
Standard Pkg. TypeTO-263-7 / D2PAK-7
Gate LevelLogic
VDSS (Max) (V)40
ID (A)160
RDS (ON) (Max) @10V (mohm)2
RDS (ON) (Max) @4.5V (mohm)5.4
Pch (W)220
Ciss (Typical) (pF)10500
Qg typ (nC)180
Series NameNP Series

封装选项

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
MP-25ZT10 x 9 x 4.97

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