特性
- Super low on-state resistance RDS(on)1 = 29.5 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 37.5 mΩ MAX. (VGS = −4.5 V, ID = −18 A)
- Low input capacitance Ciss = 3100 pF TYP.
描述
The NP36P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
产品参数
| 属性 | 值 |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Pch |
| Channels (#) | 1 |
| Standard Pkg. Type | TO-263 / D2PAK |
| Gate Level | Logic |
| VDSS (Max) (V) | -60 |
| ID (A) | -36 |
| RDS (ON) (Max) @10V (mohm) | 29.5 |
| RDS (ON) (Max) @4.5V (mohm) | 37.5 |
| Pch (W) | 56 |
| Ciss (Typical) (pF) | 3100 |
| Qg typ (nC) | 54 |
| Series Name | NP Series |
封装选项
| Pkg. Type | Lead Count (#) |
|---|---|
| MP-25ZK | 3 |
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