概览
描述
Support is limited to customers who have already adopted these products.
The NP82N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
特性
- Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 41 A)
- Low Ciss Ciss = 6000 pF TYP.
产品对比
应用
文档
相关文档
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| 类型 | 文档标题 | 日期 |
| 数据手册 | PDF 283 KB | |
| 指南 | PDF 796 KB | |
| 产品可靠性报告 | PDF 227 KB | |
| 应用说明 | PDF 648 KB 日本語 | |
| 宣传手册 | PDF 2.24 MB | |
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