特性
- Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 41 A)
- Low Ciss Ciss = 6000 pF TYP.
描述
Support is limited to customers who have already adopted these products.
The NP82N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
产品参数
| 属性 | 值 |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | TO-263 / D2PAK |
| Gate Level | Logic |
| VDSS (Max) (V) | 40 |
| ID (A) | 82 |
| RDS (ON) (Max) @10V (mohm) | 3.5 |
| RDS (ON) (Max) @4.5V (mohm) | 8 |
| Pch (W) | 143 |
| Ciss (Typical) (pF) | 6000 |
| Qg typ (nC) | 100 |
| Series Name | NP Series |
封装选项
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| MP-25ZP | 10 x 9 x 4.9 | 3 |
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