跳转到主要内容
瑞萨电子 (Renesas Electronics Corporation) - June is Pride Month, a month to raise awareness of the rights and the culture of the LGBTQ+ community

特性

  • Super low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41 A)
  • Low input capacitance Ciss = 5700 pF TYP.
  • Built-in gate protection diode

描述

Support is limited to customers who have already adopted these products.

The NP82N06PLG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Part NumberStatusSamplesStockRoHSPackageLead Count (#)Carrier TypePb (Lead) Free
NP82N06PLG-E1-AYObsoleteN/AOut of StockRoHS:EN
RoHS:JA
MP-25ZP3#Embossed TapeYes
支持社区

支持社区

在线询问瑞萨电子工程社群的技术人员,快速获得技术支持。
浏览文章

知识库

浏览我们的知识库,获取文章、常见问题解答及其他实用资源。
提交工单

提交工单

需要咨询技术性问题或提供非公开信息吗?