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NP88N03KDG

有效

Power MOSFETs for Automotive

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特性

  • Channel temperature 175 degree rating
  • Super low on-state resistance RDS(on)1 = 2.4 mΩ MAX. (VGS = 10 V, ID = 44 A) RDS(on)2 = 3.9 mΩ MAX. (VGS = 4.5 V, ID = 44 A)
  • Low Ciss: Ciss = 9000 pF TYP. (VDS = 25 V)
  • 4.5 V gate drive type
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描述

Support is limited to customers who have already adopted these products.

The NP88N03KDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

产品参数

属性值
Qualification LevelAutomotive
Nch/PchNch
Channels (#)1
Standard Pkg. TypeTO-263 / D2PAK
Gate LevelLogic
VDSS (Max) (V)30
ID (A)88
RDS (ON) (Max) @10V (mohm)2.4
RDS (ON) (Max) @4.5V (mohm)3.9
Pch (W)200
Ciss (Typical) (pF)9000
Qg typ (nC)165
Series NameNP Series

封装选项

Pkg. TypeLead Count (#)
MP-25ZK3
Part NumberStatusSamplesStockRoHSPackageBudgetary Price (USD)Lead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) FreeCountry of AssemblyCountry of Wafer Fabrication
NP88N03KDG-E1-AYActiveAvailableOut of StockContactMP-25ZK1ku | $1.4783#Embossed Tape1YesMALAYSIAJAPAN
NP88N03KDG-E1-AZObsoleteN/AOut of StockRoHS:EN
RoHS:JA
MP-25ZK3#Embossed Tape1Yes
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筛选

    推荐文档 (1)

  1. 数据手册
    英语
    NP88N03KDG Data Sheet
    RECOMMENDED
    PDF 279 KB D17404EJ3V0DS00 2005年4月01日

    数据手册 (1)

  1. 数据手册
    英语
    NP88N03KDG Data Sheet
    RECOMMENDED
    PDF 279 KB D17404EJ3V0DS00 2005年4月01日

    手册和指南 (1)

  1. 指南
    英语
    Recommended Mounting Pad for Renesas Power MOSFETs
    PDF 988 KB R07ZZ0016EJ0100 Rev.1.00 2025年12月03日
    The diagrams in this document show the recommended mounting pad layout dimensions for Renesas Power MOSFETs. In actual PCB design, optimization should consider mounting density, mountability, dimensional tolerances, and other relevant factors.

    应用说明和白皮书 (3)

  1. 应用说明
    英语
    Power MOSFETs TOLL and TOLT Comparison of Thermal Performance
    PDF 596 KB R07AN0051EJ0100 Rev.1.00 2026年4月27日
    Compares the thermal performance of automotive power MOSFETs in the TOLL (TO-Leadless) package and its derivatives, including the TOLT (TO-Leaded Top-side Cooling) package. The information presented in this document is intended to serve as a comprehensive guideline for designing high-power automotive systems.
  2. 应用说明
    英语
    Power MOSFETs: How Does the Frequency Affect Capacitance Measurement?
    PDF 936 KB R07AN0050EJ0100 Rev.1.00 2025年12月03日
    Measurement frequency and the influence of parasitic inductance are crucial in capacitance measurements for Power MOSFETs. Split-gate structures, with their low Crss and higher Ciss, face challenges from parasitic inductance, making high-frequency measurements difficult. In contrast, standard-gate trench structures allow relatively accurate results. The influence of parasitic inductance in actual measurements is examined from various perspectives.
  3. 应用说明
    英语
    Attention of Handling Semiconductor Devices
    PDF 648 KB R07ZZ0010EJ0602 Rev.6.02 日本語 2021年4月16日
    AI 生成的摘要: The document outlines derating standards for Power MOSFETs and IGBTs, emphasizing temperature, humidity, voltage, current, and power limits to ensure device reliability. It discusses package type selection between hermetic sealed and plastic molded types, highlighting the advantages of surface-mount packages for miniaturization. It also details precautions for physical handling, including proper lead forming, cutting, and mounting techniques to prevent stress and damage during installation.

    质量和可靠性 (1)

  1. 产品可靠性报告
    英语
    NP-Series USMO4Nch-MP25 Reliability Report
    PDF 227 KB APR-22-H0294 2022年6月28日
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筛选

模拟模型

    模拟模型 (1)

  1. 模型 - SPICE
    英语
    NP88N03KDG SPICE Data
    ZIP 1 KB 2018年8月06日
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