特性
- Logic level
- Built-in gate protection diode
- Super low on-state resistance RDS(on)1 = 7.8 mΩ MAX. (VGS = 10 V, ID = 45 A) RDS(on)2 = 12.5 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
- High current rating ID(DC) = ±90 A
- Low input capacitance Ciss = 4600 pF TYP.
- Designed for automotive application and AEC-Q101 qualified
描述
Support is limited to customers who have already adopted these products.
The NP90N06VLG is N-channel MOS Field Effect Transistor designed for high current switching applications.
产品参数
| 属性 | 值 |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | TO-263 / D2PAK |
| Gate Level | Logic |
| VDSS (Max) (V) | 60 |
| ID (A) | 90 |
| RDS (ON) (Max) @10V (mohm) | 7.8 |
| RDS (ON) (Max) @4.5V (mohm) | 12.5 |
| Pch (W) | 105 |
| Ciss (Typical) (pF) | 4600 |
| Qg typ (nC) | 90 |
| Series Name | NP Series |
封装选项
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| MP-3ZP | 6 x 6 x 2.65 | 3 |
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