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瑞萨电子 (Renesas Electronics Corporation)
270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB Laser Diode for 40GBASE-LR4 & 10 Gb/s E-PON ONU Application

封装信息

CAD 模型:View CAD Model
Pkg. Type:
Pkg. Code:
Lead Count (#):
Pkg. Dimensions (mm):
Pitch (mm):

环境和出口类别

RoHS (NX6350GP29-AZ)英语日文
Moisture Sensitivity Level (MSL)
Pb (Lead) FreeYes
ECCN (US)
HTS (US)

产品属性

Ith (Typical) (mA)8
Lead CompliantNo
MOQ1
Pb (Lead) FreeYes
Pf / Po (Min) (mW)8.5
RemarksFL=7.5mm, λp=1270nm, 1330nm
Tape & ReelNo
Target applicationsBi-Directional 6G/10G SFP
Tstg (Max) (°C)95
Tstg (Min) (°C)-40
Λp (Typical) for BD (nm)1330

描述

The NX6350GP series is a 1 270/1 290/1 310/1 330 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.