跳转到主要内容
270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB Laser Diode for 9.8Gbps CPRI, 10G Ethernet Application

封装信息

CAD 模型: View CAD Model
Pkg. Type:
Pkg. Code:
Lead Count (#):
Pkg. Dimensions (mm):
Pitch (mm):

环境和出口类别

RoHS (NX6353EP27-AZ) 英语日文
Moisture Sensitivity Level (MSL)
Pb (Lead) Free Yes
ECCN (US)
HTS (US)

产品属性

Ith (Typical) (mA) 7
Lead Compliant No
MOQ 1
Pb (Lead) Free Yes
Pf / Po (Min) (mW) 8.5
Remarks FL=6.2mm, λp=1270nm, 1290nm, 1310nm, 1330nm, 1350nm
Tape & Reel No
Target applications 9.8G CPRI/10G ETHERNET
Tstg (Max) (°C) 95
Tstg (Min) (°C) -40
Λp (Typical) for BD (nm) 1310

描述

The NX6353EP series is a 1 270/1 290/1 310/1 330/1 350 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.