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瑞萨电子 (Renesas Electronics Corporation)
650nm InGaAsP MQW-DFB DC-PBH PULSED Laser Diode Module for OTDR Application

封装信息

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Pkg. Type:
Pkg. Code:
Lead Count (#):
Pkg. Dimensions (mm):
Pitch (mm):

环境和出口类别

RoHS (NX8663JB-BC-AZ)英语日文
Moisture Sensitivity Level (MSL)
Pb (Lead) FreeYes
ECCN (US)
HTS (US)

产品属性

IFP @PW: 10 μs, Duty: 1 % (mA)450
Lead CompliantNo
MOQ1
Pb (Lead) FreeYes
Pf / Po (Min) (mW)50
Pf / Po (Typical) (mW)80
Tape & ReelNo
Target applicationsfor OTDR
Tstg (Max) (°C)85
Tstg (Min) (°C)-40
Λp (Typical) (nm)1650

描述

The NX8663JB-BC is a 1 650 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of Optical Time Domain Reflectometer (OTDR).