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瑞萨电子 (Renesas Electronics Corporation) - June is Pride Month, a month to raise awareness of the rights and the culture of the LGBTQ+ community

特性

  • Single supply: 2.7 to 5.5 V
  • Access time: 100 ns (max) at 2.7 V ≤ VCC < 4.5 V 70 ns (max) at 4.5 V ≤ VCC ≤ 5.5 V
  • Power dissipation: Active: 20 mW/MHz (typ) Standby: 110 μW (max)
  • On-chip latches: address, data, CE, OE, WE
  • Automatic byte write: 10 ms (max)
  • Automatic page write (64 bytes): 10 ms (max)
  • Ready/Busy
  • Data polling and Toggle bit
  • Data protection circuit on power on/off
  • Conforms to JEDEC byte-wide standard
  • Reliable CMOS with MONOS cell technology
  • 105 or more erase /write cycles
  • 10 or more years data retention
  • Software data protection
  • Write protection by RES pin (only the R1EV58064BxxR series)
  • Temperature range: -40 to +85°C
  • There are lead free products.

描述

Support is limited to customers who have already adopted these products.

Renesas Electronics’ R1EV58064BxxN series and R1EV58064BxxR series are electrically erasable and programmable EEPROM’s organized as 8192-word  8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.

Part NumberStatusSamplesStockRoHSPackageCarrier Type
R1EV58064BTCNBI#B0ObsoleteN/AOut of StockRoHS:EN
RoHS:JA
TSOP(1)Tray
R1EV58064BTCNBI#B2ObsoleteN/AOut of StockRoHS:EN
RoHS:JA
TSOP(1)Tray
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