封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | TSOP(1) |
| Pkg. Code: | pkg_11792 |
| Lead Count (#): | 28 |
| Pkg. Dimensions (mm): | 11.8 x 8 x 1.2 |
| Pitch (mm): |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 3 |
| ECCN (US) | EAR99 |
| HTS (US) | 8542.32.0041 |
| RoHS (R1LP5256ESA-5SI#B1) | 英语日文 |
| Pb (Lead) Free | Yes |
产品属性
| Carrier Type | Tray |
| Moisture Sensitivity Level (MSL) | 3 |
| Country of Assembly | TAIWAN |
| Country of Wafer Fabrication | JAPAN |
| Access Time (ns) | 55 |
| Density (Kb) | 256 |
| Lead Compliant | Yes |
| Lead Count (#) | 28 |
| Length (mm) | 12 |
| Longevity | 2032 12月 |
| MOQ | 1 |
| Memory Capacity (kbit) | 256 |
| Memory Density | 256k |
| Organization | 32K x 8 |
| Organization (bit) | x 8 |
| Organization (kword) | 32 |
| Pb (Lead) Free | Yes |
| Pkg. Dimensions (mm) | 12 x 8 x 1.2 |
| Pkg. Type | TSOP(28) |
| Price (USD) | $2.24151 |
| Remarks | Single Chip Select (CS#） |
| Replacement Remark | consolidation of part-names and/or assembly material change |
| Supply Voltage (V) | 4.5 - 5.5 |
| Tape & Reel | No |
| Temp. Range (°C) | -40 to +85 |
| Thickness (mm) | 1.2 |
| Width (mm) | 8 |
有关 R1LP5256E 的资源
描述
The R1LP5256E is a low-voltage 256-Kbit static RAM organized as 32, 768-word by 8-bit, fabricated by Renesas' high-performance 0.15µm CMOS and TFT technologies. The R1LP5256E realizes higher density, higher performance, and low-power consumption. The device is suitable for memory applications where simple interfacing, battery operation, and battery backup are the important design objectives. It has been packaged in 28-pin SOP and 28-pin TSOP.