封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | TSOP(1) |
| Pkg. Code: | pkg_463 |
| Lead Count (#): | 32 |
| Pkg. Dimensions (mm): | 18.4 x 8 x 1.2 |
| Pitch (mm): |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 2 |
| RoHS (R1LV0108ESF-5SI#B0) | 英语日文 |
| Pb (Lead) Free | Yes |
| ECCN (US) | |
| HTS (US) |
产品属性
| Carrier Type | Tray |
| Moisture Sensitivity Level (MSL) | 2 |
| Access Time (ns) | 55 |
| Density (Kb) | 1000 |
| Lead Compliant | Yes |
| Lead Count (#) | 32 |
| Length (mm) | 18 |
| MOQ | 1 |
| Memory Capacity (kbit) | 1000 |
| Memory Density | 1 |
| Organization | 128K x 8 |
| Organization (bit) | x 8 |
| Organization (kword) | 128 |
| Pb (Lead) Free | Yes |
| Pkg. Dimensions (mm) | 18 x 8 x 1.2 |
| Pkg. Type | TSOP(1) |
| Remarks | Dual Chip Select (CS1#, CS2) |
| Replacement Product | R1LV0108ESF-5SI#B1 |
| Supply Voltage (V) | 2.7 - 3.6 |
| Tape & Reel | No |
| Temp. Range (°C) | -40 to +85 |
| Thickness (mm) | 1.2 |
| Width (mm) | 8 |
有关 R1LV0108E 的资源
描述
The R1LV0108E is a low-voltage 1-Mbit static RAM organized as 131, 072-word by 8-bit, fabricated by Renesas' high-performance 0.15µm CMOS and TFT technologies. The R1LV0108E realizes higher density, higher performance, and low-power consumption. The device is suitable for memory applications where simple interfacing, battery operation, and battery backup are the important design objectives. It is packaged in a 32-pin SOP, 32-pin TSOP, and 32-pin sTSOP.