跳转到主要内容
瑞萨电子 (Renesas Electronics Corporation)
144-Mbit DDR™II+ SRAM 2-word Burst Architecture (2.5 Cycle Read latency)

封装信息

CAD 模型:View CAD Model
Pkg. Type:LBGA
Pkg. Code:pkg_9995
Lead Count (#):165
Pkg. Dimensions (mm):17 x 15 x 1.4
Pitch (mm):

环境和出口类别

RoHS (R1QBA4418RBG-19IB0)英语日文
Pb (Lead) Free
Moisture Sensitivity Level (MSL)
ECCN (US)
HTS (US)

产品属性

Pkg. TypeLBGA
Carrier TypeTray
ArchitectureDDR-II+ CIO without ODT
Burst Length (Words)2
Data Width (bits)18000
Density (Kb)144000
Frequency (Max) (MHz)533
Lead CompliantYes
Lead Count (#)165
Length (mm)17
MIN Frequency (MHz)250
Pkg. Dimensions (mm)17 x 15 x 1.4
Read Latency (Clock)2.5
Tape & ReelNo
Thickness (mm)1.4
Width (mm)15

描述

The R1QBA4436RBG is a 4, 194, 304-word by 36-bit and the R1QBA4418RBG is a 8, 388, 608-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package.