封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | QFN |
| Pkg. Code: | LUY |
| Lead Count (#): | 48 |
| Pkg. Dimensions (mm): | 7.0 x 7.0 x 0.75 |
| Pitch (mm): | 0.5 |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 3 |
| Pb (Lead) Free | Yes |
| ECCN (US) | EAR99 |
| HTS (US) | 8542.39.0090 |
| RoHS (RAA2270634GNP#MA0) | 下载 |
产品属性
| Lead Count (#) | 48 |
| Carrier Type | Reel |
| Moisture Sensitivity Level (MSL) | 3 |
| Pb (Lead) Free | Yes |
| Pb Free Category | Pb-Free 100% Matte Tin Plate w/Anneal-e3 |
| Temp. Range (°C) | -40 to +125°C |
| Country of Assembly | MALAYSIA, TAIWAN |
| Country of Wafer Fabrication | TAIWAN |
| Adaptive Dead Time | Yes |
| Advanced Fault Protection | Yes |
| Charge Pump | Yes |
| Function | 3 Phase BLDC Driver |
| Gate Drive (V) | 15 |
| ISINK (Max) (mA) | 2000 |
| ISOURCE (Max) (mA) | 1000 |
| Input Control | HI/LI or PWM |
| Input Logic Level | 1.5V/TTL |
| Input Voltage (Max) (V) | 65 |
| Input Voltage Range (V) | 4.5 - 60 |
| Intern Gain Amplifiers | 3 |
| Internal Auxiliary Power | LDO (5V or 3.3V) 200mA |
| Internal Buck Regulator | Buck Boost 500mA |
| Internal Sample & Hold | Yes |
| Length (mm) | 7 |
| MOQ | 250 |
| Parametric Category | 3-Phase MOSFET Drivers, 3-Phase FET Drivers |
| Pitch (mm) | 0.5 |
| Pkg. Dimensions (mm) | 7.0 x 7.0 x 0.75 |
| Pkg. Type | QFN |
| Price (USD) | $3.9038 |
| Qualification Level | Standard |
| Quiescent Current | 20 µA |
| Slew Rate Control | Yes |
| Thickness (mm) | 0.75 |
| VBIAS (Max) (V) | 60 |
| VOUT Slew-rate Control | Yes |
| Width (mm) | 7 |
有关 RAA227063 的资源
描述
The RAA227063 is a smart gate driver IC for 3-phase Brushless DC (BLDC) motor applications. It integrates three half-bridge smart gate drivers that are capable of driving up to three N-channel MOSFET bridges and supports bridge voltages from 4.5V to 60V. Each gate driver supports up to 1A source and 2A sink peak drive current with programmable drive strength control.
Adjustable and adaptive dead-times are implemented to ensure robustness and flexibility. The active gate holding mechanism prevents a Miller effect-induced cross-conduction and further enhances robustness.