跳转到主要内容
瑞萨电子 (Renesas Electronics Corporation)
150V, 190A, 3.9mΩ, REXFET-1 N 沟道功率 MOSFET, TOLT 封装, 车规级

封装信息

CAD 模型:View CAD Model
Pkg. Type:TOLT
Pkg. Code:
Lead Count (#):16
Pkg. Dimensions (mm):9.90 x 15.00 x 2.30
Pitch (mm):

环境和出口类别

Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
ECCN (US)
HTS (US)8541.29.0095
RoHS (RBA190N15YAPF-6UA04#KB0)英语日文

产品属性

Pkg. TypeTOLT
Lead Count (#)16
Carrier TypeEmbossed Tape
Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
Channels (#)1
Ciss (Typical) (pF)5500
Country of AssemblyCHINA
Country of Wafer FabricationCHINA
FunctionPower MOSFETs
Gate LevelStandard
ID (A)190
Id max @ 25°C (A)190
Lead CompliantNo
Length (mm)15
MOQ1300
Mounting TypeSurface Mount
Nch/PchNch
Pch (W)319
Pkg. Dimensions (mm)9.90 x 15.00 x 2.30
Qg typ (nC)76
Qualification LevelAutomotive
RDS (ON) (Max) @10V (mohm)3.9
RDS (ON) (Typical) @ 10V / 8V (mohm)3.2
Series NameREXFET-1
Simulation Model AvailableYes
Standard Pkg. TypeTOLT
Tape & ReelYes
Thickness (mm)2.3
VDSS (Max) (V)150
VGSS (V)20
Vgs (off) (Max) (V)3.7
Width (mm)9.9

描述

RBA190N15YAPF-6UA04 N 沟道功率 MOSFET 采用 REXFET-1 分离栅技术,提供 TOLT 封装。TOLT 封装采用顶部散热设计,实现超紧凑结构与卓越的散热性能。

瑞萨电子的 REXFET-1 分离栅技术非常适合需要低 RDS(on) 和重视开关能力的场景,是大功率和高频应用的理想选择。