瑞萨电子 (Renesas Electronics Corporation)
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RBA200N15YANS-3UA03 Outline
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RBA200N15YANS-3UA03#GB0

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150V, 200A, 3.4mΩ, REXFET-1 N 沟道功率 MOSFET, TOLL 封装, 车规级
RBA200N15YANS-3UA03 DatasheetLeveraging Split-Gate Trench Process to Advance MOSFET Performance有关 RBA200N15YANS-3UA03 的所有信息

封装信息

CAD 模型:View CAD Model
Pkg. Type:TOLL
Pkg. Code:
Lead Count (#):8
Pkg. Dimensions (mm):9.90 x 11.68 x 2.30
Pitch (mm):

环境和出口类别

Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
HTS (US)8541.29.0095
RoHS (RBA200N15YANS-3UA03#GB0)英语日文
ECCN (US)

产品属性

Pkg. TypeTOLL
Lead Count (#)8
Carrier TypeEmbossed Tape
Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
Channels (#)1
Ciss (Typical) (pF)6200
Country of AssemblyCHINA
Country of Wafer FabricationCHINA
FunctionPower MOSFETs
Gate LevelStandard
ID (A)200
Id max @ 25°C (A)200
Lead CompliantNo
Length (mm)11.68
MOQ2000
Mounting TypeSurface Mount
Nch/PchNch
Pch (W)366
Pkg. Dimensions (mm)9.90 x 11.68 x 2.30
Price (USD)$4.6328
Qg typ (nC)86
Qualification LevelAutomotive
RDS (ON) (Max) @10V (mohm)3.4
RDS (ON) (Typical) @ 10V / 8V (mohm)2.8
Series NameREXFET-1
Simulation Model AvailableYes
Standard Pkg. TypeTOLL
Tape & ReelYes
Thickness (mm)2.3
VDSS (Max) (V)150
VGSS (V)20
Vgs (off) (Max) (V)3.7
Width (mm)9.9

描述

RBA200N15YANS-3UA03 N 沟道功率 MOSFET 采用 REXFET-1 分离栅技术，提供 TOLL 封装。TOLL 封装采用超紧凑无引脚设计和可润湿侧翼结构，可增强热性能和可靠性并提高组装的便利性。

瑞萨电子的 REXFET-1 分离栅技术非常适合需要低 RDS(on) 和重视开关能力的场景，是大功率和高频应用的理想选择。

有关 RBA200N15YANS-3UA03 的所有信息