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REXFET-1 N 沟道功率 MOSFET 100V-340A-1.5mΩ

封装信息

CAD 模型:View CAD Model
Pkg. Type:TOLG
Pkg. Code:
Lead Count (#):8
Pkg. Dimensions (mm):9.90 x 11.70 x 2.50
Pitch (mm):

环境和出口类别

Moisture Sensitivity Level (MSL)1
ECCN (US)EAR99
HTS (US)8541.29.0095
RoHS (RBA300N10EHPF-5UA02#GB0)英语日文
Pb (Lead) FreeYes

产品属性

Pkg. TypeTOLG
Standard Pkg. TypeTOLG
Carrier TypeEmbossed Tape
Moisture Sensitivity Level (MSL)1
Country of AssemblyMALAYSIA
Country of Wafer FabricationJAPAN
ApplicationAutomotive, Industrial Use
Automotive Qual.Yes
Channels (#)1
Ciss (Typical) (pF)13000
FunctionPower MOSFETs
Gate LevelStandard
ID (A)340
Id max @ 25°C (A)340
Lead CompliantNo
Lead Count (#)8
Length (mm)11.7
MOQ1500
Mounting TypeSurface Mount
Nch/PchNch
Pb (Lead) FreeYes
Pch (W)468
Pkg. Dimensions (mm)9.90 x 11.70 x 2.50
Price (USD)$2.31642
Qg typ (nC)170
Qualification LevelAutomotive
RDS (ON) (Max) @10V (mohm)1.5
RDS (ON) (Typical) @ 10V / 8V (mohm)1.3
Series NameREXFET-1
Simulation Model AvailableYes
Tape & ReelYes
Target applicationsSmall Traction, 48V load, OBC, Charging station, LDC, Energy infrastructure, Micro inverter, Power-tool, DC-DC, etc.
VDSS (Max) (V)100
VGSS (V)20
Vgs (off) (Max) (V)4
Width (mm)9.9

描述

Renesas的 TOLG 技术采用超紧凑的海鸥翼式引脚设计,可提高热性能、电源管理效率,并改善板载热循环性能。 Renesas 的分离栅极技术适用于需要低 RDS(on) 和重视开关性能的应用,是高功率和高频应用的理想选择。