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RBA30N04DANS-4UB10

有效

ANL4 N 沟道功率 MOSFET 40V–30A–10mΩ–SO8-FL 车用

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特性

  • 标准级栅极驱动电压：VGS（th） = 2.0V 至 4.0V
  • 超低导通电阻：RDS（on） = 10mΩ max.
  • 低输入电容
  • 专为汽车应用而设计，符合 AEC-Q101 标准
查找功率 MOSFET的其他产品
RBA30N04DANS-4UB10 Outline
RBA30N04DANS-4UB10 Outline

描述

该40V系列产品采用ANL4技术，以实现低导通电阻。 同时，降低了电容和栅极电荷，可实现更高效的开关。 得益于该技术，可实现高开关速度和低功率损耗，从而提高能源效率。 此外，耐用性和可靠性的提升，使其广泛适用于汽车应用，如电源管理系统、电机控制和 DC/DC 转换器。

产品参数

属性值
Qualification LevelAutomotive
Nch/PchNch
Channels (#)1
Standard Pkg. TypeSO8-FL 5x6 BSC
Gate LevelStandard
VDSS (Max) (V)40
ID (A)30
RDS (ON) (Max) @10V (mohm)10
Pch (W)26
Ciss (Typical) (pF)770
Qg typ (nC)19
Series NameANL4

封装选项

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
SO8-FL5.15 x 6.10 x 1.008

应用

  • 12V电动助力转向系统(EPS)
  • 防抱死制动系统(ABS)
  • 电源管理系统(PMS)
  • 电池管理系统(BMS)
  • 电子保险丝(E-fuse)
器件号状态样品库存RoHS封装预算价格（美元）Lead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) Free
RBA30N04DANS-4UB10#HB0ActiveAvailable缺货RoHS:EN
RoHS:JA
SO8-FL1ku | $0.1938#Embossed Tape1Yes
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筛选

    推荐文档 (1)

  1. 数据手册
    英语
    RBA30N04DANS-4UB10 Datasheet
    RECOMMENDED
    PDF 350 KB R07DS1585EJ0140 Rev.1.40 2026年3月04日
    The RBA30N04DANS-4UB10 is an AEC‑Q101 qualified N‑channel power MOSFET featuring low RDS(on) and low input capacitance for high‑speed switching and low power loss. It uses a Renesas SO8‑FL 5x6mm² flat‑lead, copper‑clip package, supporting high current with excellent thermal performance, durability, and reliability, making it ideal for automotive applications such as power management, motor drives, and efuse.

    数据手册 (1)

  1. 数据手册
    英语
    RBA30N04DANS-4UB10 Datasheet
    RECOMMENDED
    PDF 350 KB R07DS1585EJ0140 Rev.1.40 2026年3月04日
    The RBA30N04DANS-4UB10 is an AEC‑Q101 qualified N‑channel power MOSFET featuring low RDS(on) and low input capacitance for high‑speed switching and low power loss. It uses a Renesas SO8‑FL 5x6mm² flat‑lead, copper‑clip package, supporting high current with excellent thermal performance, durability, and reliability, making it ideal for automotive applications such as power management, motor drives, and efuse.

    手册和指南 (1)

  1. 指南
    英语
    Recommended Mounting Pad for Renesas Power MOSFETs
    PDF 988 KB R07ZZ0016EJ0100 Rev.1.00 2025年12月03日
    The diagrams in this document show the recommended mounting pad layout dimensions for Renesas Power MOSFETs. In actual PCB design, optimization should consider mounting density, mountability, dimensional tolerances, and other relevant factors.

    应用说明和白皮书 (5)

  1. 应用说明
    英语
    Power MOSFETs TOLL and TOLT Comparison of Thermal Performance
    PDF 596 KB R07AN0051EJ0100 Rev.1.00 2026年4月27日
    Compares the thermal performance of automotive power MOSFETs in the TOLL (TO-Leadless) package and its derivatives, including the TOLT (TO-Leaded Top-side Cooling) package. The information presented in this document is intended to serve as a comprehensive guideline for designing high-power automotive systems.
  2. 应用说明
    英语
    Power MOSFETs: How Does the Frequency Affect Capacitance Measurement?
    PDF 936 KB R07AN0050EJ0100 Rev.1.00 2025年12月03日
    Measurement frequency and the influence of parasitic inductance are crucial in capacitance measurements for Power MOSFETs. Split-gate structures, with their low Crss and higher Ciss, face challenges from parasitic inductance, making high-frequency measurements difficult. In contrast, standard-gate trench structures allow relatively accurate results. The influence of parasitic inductance in actual measurements is examined from various perspectives.
  3. 应用说明
    英语
    Renesas Power MOS SPICE Model
    PDF 653 KB R07AN0048EJ0100 Rev.1.00 2025年5月13日
  4. 应用说明
    英语
    Power MOSFET Application Note
    PDF 3.23 MB R07AN0007EJ0110 Rev.1.10 日本語 2022年12月05日
    AI 生成的摘要: Absolute maximum ratings define safe operational limits for MOSFETs, including voltage, current, and temperature thresholds to prevent device damage. Electrical characteristics specify parameters like breakdown voltage, threshold voltage, on-resistance, capacitances, and switching times. Allowable channel dissipation decreases as case temperature rises, calculated by a specific formula. The safe operating area (SOA) outlines five limiting conditions: current rating, on-resistance, channel dissipation, secondary breakdown, and voltage rating, ensuring reliable MOSFET operation under various conditions.
  5. 应用说明
    英语
    Attention of Handling Semiconductor Devices
    PDF 648 KB R07ZZ0010EJ0602 Rev.6.02 日本語 2021年4月16日
    AI 生成的摘要: The document outlines derating standards for Power MOSFETs and IGBTs, emphasizing temperature, humidity, voltage, current, and power limits to ensure device reliability. It discusses package type selection between hermetic sealed and plastic molded types, highlighting the advantages of surface-mount packages for miniaturization. It also details precautions for physical handling, including proper lead forming, cutting, and mounting techniques to prevent stress and damage during installation.

    质量和可靠性 (1)

  1. 产品可靠性报告
    英语
    ANL4-Series Reliability Report for AEC-Q101
    PDF 606 KB APR-25-H0112-C 2026年4月01日
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筛选

模拟模型

    模拟模型 (2)

  1. 模型 - SPICE
    英语
    RBA30N04DANS-4UB10 Ltspice Data
    ZIP 64 KB 20250610-rs-rba30n04dans4ub10_lts 2025年6月10日
  2. 模型 - SPICE
    英语
    RBA30N04DANS-4UB10 Pspice Data
    ZIP 23 KB 20250610-rs-rba30n04dans4ub10_ps 2025年6月10日
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