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ANL4 N 沟道功率 MOSFET 40V–80A–3mΩ–SO8-FL 车用

封装信息

CAD 模型: View CAD Model
Pkg. Type: SO8-FL
Pkg. Code:
Lead Count (#): 8
Pkg. Dimensions (mm): 5.75 x 4.90 x 1.10
Pitch (mm):

环境和出口类别

Moisture Sensitivity Level (MSL) 1
Pb (Lead) Free Yes
ECCN (US) EAR99
HTS (US) 8541.29.0040

产品属性

Pkg. Type SO8-FL
Lead Count (#) 8
Carrier Type Embossed Tape
Moisture Sensitivity Level (MSL) 1
Pb (Lead) Free Yes
Channels (#) 1
Ciss (Typical) (pF) 2690
Country of Assembly MALAYSIA
Country of Wafer Fabrication JAPAN
Function Power MOSFETs
Gate Level Standard
ID (A) 80
Id max @ 25°C (A) 80
Lead Compliant No
MOQ 5000
Mounting Type Surface Mount
Nch/Pch Nch
Pch (W) 79
Pkg. Dimensions (mm) 5.75 x 4.90 x 1.10
Qg typ (nC) 56
Qualification Level Automotive
RDS (ON) (Max) @10V or 8V (mohm) 3
RDS (ON) (Typical) @ 10V / 8V (mohm) 2.5
Series Name ANL4
Simulation Model Available Yes
Standard Pkg. Type SO8-FL 5x6 BSC
Tape & Reel No
VDSS (Max) (V) 40
VGSS (V) 20
Vgs (off) (Max) (V) 4

描述

该40V系列产品采用ANL4技术,以实现低导通电阻。 同时,降低了电容和栅极电荷,可实现更高效的开关。 得益于该技术,可实现高开关速度和低功率损耗,从而提高能源效率。 此外,耐用性和可靠性的提升,使其广泛适用于汽车应用,如电源管理系统、电机控制和 DC/DC 转换器。