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封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | TOLT |
| Pkg. Code: | |
| Lead Count (#): | 16 |
| Pkg. Dimensions (mm): | 9.90 x 15.00 x 2.30 |
| Pitch (mm): |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| HTS (US) | 8541.29.0095 |
| RoHS (RBE019N10R1SZPW#KB0) | 英语日文 |
| ECCN (US) |
产品属性
| Pkg. Type | TOLT |
| Lead Count (#) | 16 |
| Carrier Type | Embossed Tape |
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| Channels (#) | 1 |
| Ciss (Typical) (pF) | 11000 |
| Country of Assembly | CHINA |
| Country of Wafer Fabrication | JAPAN |
| Function | Power MOSFETs |
| Gate Level | Standard |
| ID (A) | 230 |
| Id max @ 25°C (A) | 230 |
| Lead Compliant | No |
| Length (mm) | 15 |
| MOQ | 1300 |
| Mounting Type | Surface Mount |
| Nch/Pch | Nch |
| Pch (W) | 405 |
| Pkg. Dimensions (mm) | 9.90 x 15.00 x 2.30 |
| Qg typ (nC) | 140 |
| Qualification Level | Industrial |
| RDS (ON) (Max) @10V (mohm) | 1.9 |
| RDS (ON) (Typical) @ 10V / 8V (mohm) | 1.63 |
| Series Name | REXFET-1 |
| Simulation Model Available | Yes |
| Standard Pkg. Type | TOLT |
| Tape & Reel | Yes |
| Thickness (mm) | 2.3 |
| VDSS (Max) (V) | 100 |
| VGSS (V) | 20 |
| Vgs (off) (Max) (V) | 4 |
| Width (mm) | 9.9 |
有关 RBE019N10R1SZPW 的资源
描述
RBE019N10R1SZPW N 沟道功率 MOSFET 采用 REXFET-1 分栅技术，采用 TOLT 封装。 TOLT 封装采用顶部散热设计，实现超紧凑结构与卓越的散热性能。
瑞萨电子的 REXFET-1 分离栅技术非常适合需要低 RDS(on) 和重视开关能力的场景、是大功率和高频应用的理想选择。