封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | Wafer |
| Pkg. Code: | |
| Lead Count (#): | |
| Pkg. Dimensions (mm): | |
| Pitch (mm): |
环境和出口类别
| Moisture Sensitivity Level (MSL) | |
| Pb (Lead) Free | No |
| ECCN (US) | |
| HTS (US) |
产品属性
| Pkg. Type | Wafer |
| Application | Inverter |
| Channels (#) | 1 |
| IC @100 °C (A) | 40 |
| Lead Compliant | Yes |
| MOQ | 1 |
| Nch/Pch | Nch |
| Pb (Lead) Free | No |
| Qualification Level | Industrial |
| Series Name | RBNxxN125S1U Series |
| Tape & Reel | No |
| VCE (sat) (V) | 1.8 |
| VCES (V) | 1250 |
| tsc (μs) | 10 |
有关 RBN40N125S1UFWA 的资源
描述
Renesas' 8th-generation insulated-gate bipolar transistors (IGBTs) feature an exclusive trench gate configuration in the process structure. These devices deliver faster switching performance compared to earlier IGBT generations and reduce conduction losses by lowering the saturation voltage.
The RBN40N125S1UFWA 1250V/40A IGBT offers a low collector-to-emitter saturation voltage, making it suitable for power switching applications. It is available as an unsawn wafer.
