封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | Wafer |
| Pkg. Code: | |
| Lead Count (#): | |
| Pkg. Dimensions (mm): | |
| Pitch (mm): |
环境和出口类别
| Moisture Sensitivity Level (MSL) | |
| Pb (Lead) Free | No |
| ECCN (US) | |
| HTS (US) |
产品属性
| Pkg. Type | Wafer |
| Application | Inverter |
| Channels (#) | 1 |
| IC @100 °C (A) | 50 |
| Lead Compliant | Yes |
| MOQ | 1 |
| Nch/Pch | Nch |
| Pb (Lead) Free | No |
| Qualification Level | Industrial |
| Series Name | RBNxxN65T1U Series |
| Tape & Reel | No |
| VCE (sat) (V) | 1.5 |
| VCES (V) | 650 |
有关 RBN50N65T1UFWA 的资源
描述
Renesas' 8th-generation insulated-gate bipolar transistors (IGBTs) feature an exclusive trench gate configuration in the process structure. These devices deliver faster switching performance compared to earlier IGBT generations and reduce conduction losses by lowering the saturation voltage.
The RBN50N65T1UFWA 650V/50A IGBT offers a low collector-to-emitter saturation voltage, making it suitable for power switching applications. It is available as an unsawn wafer.