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RJE0603JPE

过时

Pch Thermal FET -60V -50A 15mohm TO-263 / D2PAK

特性

  • High endurance capability against to the short circuit.
  • Built-in the over temperature shut-down circuit.
  • Latch type shut down operation (need 0 voltage recovery).
  • Built-in the current limitation circuit.
  • AEC-Q101 Compliant
查找功率 MOSFET的其他产品

描述

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. .

Part NumberStatusSamplesStockPackageLead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) Free
RJE0603JPE-00#J3ObsoleteAvailableIn StockLDPAK(S)-(1)4#Embossed Tape1Yes
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筛选

    推荐文档 (1)

  1. 数据手册
    英语
    RJE0603JPE Datasheet
    RECOMMENDED
    PDF 82 KB R07DS0193EJ0200 Rev.2.00 日本語 2010年11月04日

    数据手册 (1)

  1. 数据手册
    英语
    RJE0603JPE Datasheet
    RECOMMENDED
    PDF 82 KB R07DS0193EJ0200 Rev.2.00 日本語 2010年11月04日

    手册和指南 (1)

  1. 指南
    英语
    Recommended Mounting Pad for Renesas Power MOSFETs
    PDF 988 KB R07ZZ0016EJ0100 Rev.1.00 2025年12月03日
    The diagrams in this document show the recommended mounting pad layout dimensions for Renesas Power MOSFETs. In actual PCB design, optimization should consider mounting density, mountability, dimensional tolerances, and other relevant factors.

    应用说明和白皮书 (5)

  1. 应用说明
    英语
    Power MOSFETs TOLL and TOLT Comparison of Thermal Performance
    PDF 596 KB R07AN0051EJ0100 Rev.1.00 2026年4月27日
    Compares the thermal performance of automotive power MOSFETs in the TOLL (TO-Leadless) package and its derivatives, including the TOLT (TO-Leaded Top-side Cooling) package. The information presented in this document is intended to serve as a comprehensive guideline for designing high-power automotive systems.
  2. 应用说明
    英语
    Power MOSFETs: How Does the Frequency Affect Capacitance Measurement?
    PDF 936 KB R07AN0050EJ0100 Rev.1.00 2025年12月03日
    Measurement frequency and the influence of parasitic inductance are crucial in capacitance measurements for Power MOSFETs. Split-gate structures, with their low Crss and higher Ciss, face challenges from parasitic inductance, making high-frequency measurements difficult. In contrast, standard-gate trench structures allow relatively accurate results. The influence of parasitic inductance in actual measurements is examined from various perspectives.
  3. 应用说明
    英语
    Power MOSFET Application Note
    PDF 3.23 MB R07AN0007EJ0110 Rev.1.10 日本語 2022年12月05日
    AI 生成的摘要: Absolute maximum ratings define safe operational limits for MOSFETs, including voltage, current, and temperature thresholds to prevent device damage. Electrical characteristics specify parameters like breakdown voltage, threshold voltage, on-resistance, capacitances, and switching times. Allowable channel dissipation decreases as case temperature rises, calculated by a specific formula. The safe operating area (SOA) outlines five limiting conditions: current rating, on-resistance, channel dissipation, secondary breakdown, and voltage rating, ensuring reliable MOSFET operation under various conditions.
  4. 应用说明
    英语
    Attention of Handling Semiconductor Devices
    PDF 648 KB R07ZZ0010EJ0602 Rev.6.02 日本語 2021年4月16日
    AI 生成的摘要: The document outlines derating standards for Power MOSFETs and IGBTs, emphasizing temperature, humidity, voltage, current, and power limits to ensure device reliability. It discusses package type selection between hermetic sealed and plastic molded types, highlighting the advantages of surface-mount packages for miniaturization. It also details precautions for physical handling, including proper lead forming, cutting, and mounting techniques to prevent stress and damage during installation.
  5. 应用说明
    中文
    功率MOS FET 应用说明
    PDF 2.71 MB RCJ05G0001-0100 Rev.1.00 2008年5月30日
    AI 生成的摘要: 本文介绍了功率MOSFET的电气特性及其应用，重点说明了绝对最大额定值和25°C时的详细电气参数。涵盖了漏极-源极击穿电压、栅极截止电压、导通电阻、电容、栅极电荷、开关时间及二极管特性等关键指标。还讨论了温度依赖性及其对性能和损耗的影响，为设计提供指导。

    产品通告（产品变更、EOL 等） (3)

  1. 产品变更通告
    英语
    Unification of a JEDEC tray and a embossed carrier tape for LQFP package (Additional Information & Correction)
    PDF 4.86 MB PC-WRP-A001C/E 日本語 2018年1月23日
  2. 产品变更通告
    英语
    Unification of a JEDEC tray and a embossed carrier tape for LQFP package ( PC-WRP-A001B/E )
    PDF 3.74 MB PC-WRP-A001B/E 日本語 2017年3月08日
  3. 产品变更通告
    英语
    Unification of a JEDEC tray and a embossed carrier tape for LQFP package ( PC-WRP-A001A/E )
    PDF 1.46 MB PC-WRP-A001A/E 日本語 2016年7月01日

    质量和可靠性 (1)

  1. 产品可靠性报告
    英语
    Thermal FET Gen3-Series LDPAK Reliability Report for AEC-Q101
    PDF 193 KB APR-24-H0377 2024年12月27日

    营销资料 (2)

  1. 宣传手册
    中文
    瑞萨 分立器件 综合产品目录 晶体管／二极管／双向晶闸管／晶闸管
    PDF 11.56 MB R07CS0004XJ0100 Rev.1.00 2012年4月01日
  2. 宣传手册
    英语
    Renesas Semiconductor Lead-Free Packages
    PDF 1.32 MB REJ01K0001-0200 Rev.2.00 2006年2月02日
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模拟模型

    模拟模型 (2)

  1. 模型 - SPICE
    英语
    RJE0603JPE Ltspice Data
    LIB 5 KB 20241022-rs-rje0603jpe_ltspice 2024年10月21日
  2. 模型 - SPICE
    英语
    RJE0603JPE Pspice Data
    LIB 5 KB 20241022-rs-rje0603jpe_pspice 2024年10月21日
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