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瑞萨电子 (Renesas Electronics Corporation)
N Channel Thermal FET Power Switching

封装信息

CAD 模型:View CAD Model
Pkg. Type:HSON
Pkg. Code:pkg_11567
Lead Count (#):8
Pkg. Dimensions (mm):5.4 x 5 x 1.45
Pitch (mm):

环境和出口类别

Moisture Sensitivity Level (MSL)1
ECCN (US)EAR99
HTS (US)8542.39.0090
RoHS (RJF0626JNS-00#Q7)英语日文
Pb (Lead) FreeYes

产品属性

Pkg. TypeHSON
Standard Pkg. TypeSO8-FL 5x6 BSC
Carrier TypeEmbossed Tape
Moisture Sensitivity Level (MSL)1
Country of AssemblyJAPAN
Country of Wafer FabricationJAPAN
ApplicationAutomotive Use
Automotive Qual.Yes
Channels (#)2
Channels per device (#)2
FunctionThermal FETs
Gate LevelLogic
ID (A)7
Id max @ 25°C (A)7
Lead CompliantNo
Lead Count (#)8
Length (mm)5.4
MOQ2500
Mounting TypeSurface Mount
Nch/PchNch
Pb (Lead) FreeYes
Pch (W)30
Pkg. Dimensions (mm)5.4 x 5 x 1.45
Price (USD)$1.45962
Qualification LevelAutomotive
RDS (ON) (Max) @10V (mohm)80
RDS (ON) (Max) @4.5V (mohm)100
RDS (ON) (Typical) @ 10V / 8V (mohm)64.9
RDS (on) (Max) @4V to 4.5V (mohm)100
RDS (on) (Max) @8V to 10V (mohm)80
RDS (on) (ohm) typ. @4V to 4.5V (mohm)79.8
RDS (on) (ohm) typ. @8V to 10V (mohm)64.9
Series NameThermal FETs
Simulation Model AvailableYes
Tape & ReelNo
Thickness (mm)1.45
VDSS (Max) (V)60
Vgs (off) (Max) (V)2.1
Width (mm)5

描述

This FET has overtemperature shut-down capability sensing for junction temperature. This FET also has a built-in overtemperature shut-down circuit in the gate area, and circuit operation to shut down the gate voltage in case of high junction temperature caused by excessive power consumption, overcurrent, etc.