概览
描述
This FET has overtemperature shut-down capability sensing for junction temperature. This FET also has a built-in overtemperature shut-down circuit in the gate area, and circuit operation to shut down the gate voltage in case of high junction temperature caused by excessive power consumption, overcurrent, etc.
特性
- Logic level operation (4V gate drive)
- Built-in overtemperature shut-down circuit and current limitation circuit
- High endurance capability against short circuit
- Temperature hysteresis type
- High-density mounting
- Built-in current limitation circuit
- Power supply voltage applies 12V and 24V
- AEC-Q101 Rev-E compliant
