特性
- Logic level operation (4V gate drive)
- Built-in overtemperature shut-down circuit and current limitation circuit
- High endurance capability against short circuit
- Temperature hysteresis type
- High-density mounting
- Built-in current limitation circuit
- Power supply voltage applies 12V and 24V
- AEC-Q101 Rev-E compliant
描述
This FET has overtemperature shut-down capability sensing for junction temperature. This FET also has a built-in overtemperature shut-down circuit in the gate area, and circuit operation to shut down the gate voltage in case of high junction temperature caused by excessive power consumption, overcurrent, etc.
产品参数
| 属性 | 值 |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Nch |
| Channels (#) | 2 |
| Standard Pkg. Type | 8-pin HSON Dual |
| Simulation Model Available | Yes |
| VDSS (Max) (V) | 60 |
| ID (A) | 7 |
| RDS (ON) (Max) @10V or 8V (mohm) | 80 |
| RDS (ON) (Max) @ 4V or 4.5V or 5V (m ohm) | 100 |
| RDS (ON) (Typical) @ 10V / 8V (mohm) | 64.9 |
| Pch (W) | 30 |
| Vgs (off) (Max) (V) | 2.1 |
| Mounting Type | Surface Mount |
| Function | Thermal FETs |
封装选项
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| HSON | 5.4 x 5 x 1.45 | 8 |
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