封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | Wafer |
| Pkg. Code: | |
| Lead Count (#): | |
| Pkg. Dimensions (mm): | |
| Pitch (mm): |
环境和出口类别
| Moisture Sensitivity Level (MSL) | |
| Pb (Lead) Free | No |
| ECCN (US) | |
| HTS (US) |
产品属性
| Pkg. Type | Wafer |
| Application | Inverter |
| Channels (#) | 1 |
| IC @25 °C (A) | 200 |
| Ic (Peak) (A) | 400 |
| Lead Compliant | No |
| MOQ | 1 |
| Nch/Pch | Nch |
| Pb (Lead) Free | No |
| Qualification Level | Industrial |
| Simulation Model Available | Yes |
| Technology | AE4 |
| Tj (°C) | 175 |
| VCE (sat) (V) | 1.5 |
| VCES (V) | 1200 |
| VGE (Off) (V) | 7 |
| tsc (μs) | 6 |
有关 RJP1C15DWA 的资源
描述
Renesas' AE4 IGBTs use a unique trench gate configuration in its process structure. These devices offer low saturation voltage without sacrificing robustness, while also minimizing switching losses. This 1200V/200A IGBT is optimized for high-power applications such as inverters.