封装信息
| Pkg. Type: | Chip |
| Pkg. Code: | |
| Lead Count (#): | |
| Pkg. Dimensions (mm): | |
| Pitch (mm): |
环境和出口类别
| Pb (Lead) Free | No |
| RoHS (RJP1CS27DWT-80#X0) | 英语日文 |
| Moisture Sensitivity Level (MSL) | |
| ECCN (US) | |
| HTS (US) |
产品属性
| Pkg. Type | Chip |
| Pb (Lead) Free | No |
| Channels (#) | 1 |
| IC @100 °C (A) | 150 |
| IC @25 °C (A) | 300 |
| Lead Compliant | No |
| MOQ | 1 |
| Nch/Pch | Nch |
| Series Name | 1CSxx Series |
| Tape & Reel | No |
| VCE (sat) (V) | 1.55 |
| VCES (V) | 1250 |
| tf (Typical) (µs) | 0.32 |
| tsc (μs) | 10 |
有关 RJP1CS27DWT 的资源
描述
The RJP1CS27DWT is a 1250V, 150A, single switch, insulated-gate bipolar transistor (IGBT) with a gate emitter voltage of -30V to 30V, saturated collector emitter voltage of 1.55V, a 150A to 300A DC collector current, and collector emitter voltage of 1250V.