封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | FBGA(48) |
| Pkg. Code: | pkg_11618 |
| Lead Count (#): | 48 |
| Pkg. Dimensions (mm): | 8 x 8 x 1.2 |
| Pitch (mm): |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 3 |
| ECCN (US) | 3A991.b.2.a |
| HTS (US) | 8542.32.0041 |
| RoHS (RMLV0816BGBG-4S2#AC0) | 英语日文 |
| Pb (Lead) Free | Yes |
产品属性
| Carrier Type | Tray |
| Moisture Sensitivity Level (MSL) | 3 |
| Country of Assembly | CHINA, JAPAN, TAIWAN |
| Country of Wafer Fabrication | JAPAN |
| Access Time (ns) | 45 |
| Density (Kb) | 8000 |
| Lead Compliant | Yes |
| Lead Count (#) | 48 |
| Length (mm) | 8 |
| Longevity | 2032 十二月 |
| MOQ | 1 |
| Memory Capacity (kbit) | 8000 |
| Memory Density | 8 |
| Organization | 512K x 16 |
| Organization (bit) | x 16 |
| Organization (kword) | 512 |
| Pb (Lead) Free | Yes |
| Pkg. Dimensions (mm) | 8 x 8 x 1.2 |
| Pkg. Type | FBGA(48) |
| Price (USD) | $5.71251 |
| Remarks | Dual Chip Select (CS1#, CS2) |
| Replacement Remark | Change in generation from 0.15 um to 0.11 um |
| Supply Voltage (V) | 2.4 - 3.6 |
| Tape & Reel | No |
| Temp. Range (°C) | -40 to +85 |
| Thickness (mm) | 1.2 |
| Width (mm) | 8 |
有关 RMLV0816BGBG 的资源
描述
The RMLV0816BGBG is an 8-Mbit static RAM organized as 524, 288-word × 16-bit, fabricated by Renesas' high-performance Advanced LPSRAM technologies. The RMLV0816BGBG realizes higher density, higher performance, and low-power consumption. The device offers low-power standby power dissipation. Therefore, it is suitable for battery backup systems. It is offered in a 48-ball fine-pitch ball grid array.