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瑞萨电子 (Renesas Electronics Corporation) - June is Pride Month, a month to raise awareness of the rights and the culture of the LGBTQ+ community
8Mb Advanced LPSRAM (512k word × 16-bit)

封装信息

CAD 模型:View CAD Model
Pkg. Type:FBGA(48)
Pkg. Code:pkg_11618
Lead Count (#):48
Pkg. Dimensions (mm):8 x 8 x 1.2
Pitch (mm):

环境和出口类别

Moisture Sensitivity Level (MSL)3
ECCN (US)3A991.b.2.a
HTS (US)8542.32.0041
Pb (Lead) FreeYes

产品属性

Carrier TypeTray
Moisture Sensitivity Level (MSL)3
Country of AssemblyCHINA, JAPAN, TAIWAN
Country of Wafer FabricationJAPAN
Access Time (ns)45
Density (Kb)8000
Lead CompliantYes
Lead Count (#)48
Length (mm)8
MOQ1
Memory Capacity (kbit)8000
Memory Density8
Organization512K x 16
Organization (bit)x 16
Organization (kword)512
Pb (Lead) FreeYes
Pkg. Dimensions (mm)8 x 8 x 1.2
Pkg. TypeFBGA(48)
Price (USD)$5.71251
RemarksDual Chip Select (CS1#, CS2)
Replacement RemarkChange in generation from 0.15 um to 0.11 um
Supply Voltage (V)2.4 - 3.6
Tape & ReelNo
Temp. Range (°C)-40 to +85
Thickness (mm)1.2
Width (mm)8

描述

The RMLV0816BGBG is an 8-Mbit static RAM organized as 524, 288-word × 16-bit, fabricated by Renesas' high-performance Advanced LPSRAM technologies. The RMLV0816BGBG realizes higher density, higher performance, and low-power consumption. The device offers low-power standby power dissipation. Therefore, it is suitable for battery backup systems. It is offered in a 48-ball fine-pitch ball grid array.