封装信息
| Pkg. Code | pkg_11787 |
| Lead Count (#) | 44 |
| Pkg. Type | TSOP(44) |
| Pkg. Dimensions (mm) | 18.41 x 10.16 x 1.2 |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 3 |
| ECCN (US) | 5A002 |
| HTS (US) | 8542.32.0041 |
| RoHS (RMLV0816BGSB-4S2#HA0) | 英语日文 |
| Pb (Lead) Free | Yes |
产品属性
| Carrier Type | Embossed Tape |
| Moisture Sensitivity Level (MSL) | 3 |
| Country of Assembly | China, Malaysia, Taiwan |
| Country of Wafer Fabrication | Japan |
| Price (USD) | 1ku | 3.78834 |
| Access Time (ns) | 45 |
| Density (Kb) | 8000 |
| Lead Compliant | Yes |
| Lead Count (#) | 44 |
| Length (mm) | 18 |
| Longevity | 2032 12月 |
| MOQ | 1000 |
| Memory Capacity (kbit) | 8000 |
| Memory Density | 8M |
| Organization | 512K x 16 |
| Organization (bit) | x 16 |
| Organization (kword) | 512 |
| Pb (Lead) Free | Yes |
| Pkg. Dimensions (mm) | 18 x 10 x 1.2 |
| Pkg. Type | TSOP(44) |
| Remarks | Single Chip Select (CS#） |
| Replacement Remark | Change in generation from 0.15 um to 0.11 um |
| Supply Voltage (V) | 2.4 - 3.6 |
| Tape & Reel | No |
| Temp. Range | -40 to +85°C |
| Thickness (mm) | 1.2 |
| Width (mm) | 10 |
描述
The RMLV0816BGSB is a family of 8-Mbit static RAMs organized 524, 288-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0816BGSB has realized higher density, higher performance and low power consumption. The RMLV0816BGSB offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 44pin TSOP (II).