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封装信息

CAD 模型: View CAD Model
Pkg. Type: TFBGA
Pkg. Code: pkg_846
Lead Count (#): 48
Pkg. Dimensions (mm): 9.5 x 8 x 1.2
Pitch (mm): 0.75

环境和出口类别

Moisture Sensitivity Level (MSL) 3
ECCN (US) 3A991.b.2.a
HTS (US) 8542.32.0041
RoHS (RMLV1616AGBG-5U2#AC0) 英语日文
Pb (Lead) Free Yes

产品属性

Longevity 1999 1月
Pkg. Type TFFBGA
Carrier Type Tray
Moisture Sensitivity Level (MSL) 3
Country of Assembly JAPAN TAIWAN
Country of Wafer Fabrication JAPAN
Access Time (ns) 55
Density (Kb) 16000
Lead Compliant Yes
Lead Count (#) 48
Length (mm) 10
MOQ 1
Memory Capacity (kbit) 16000
Memory Density 16M
Organization 1M x 16
Organization (bit) x 16
Organization (kword) 1000
Pb (Lead) Free Yes
Pkg. Dimensions (mm) 10 x 8 x 1.2
Remarks Dual Chip Select (CS1#, CS2)
Supply Voltage (V) 2.7 - 3.6
Tape & Reel No
Temp. Range (°C) -40 to +85
Thickness (mm) 1.2
Width (mm) 8

描述

The RMLV1616A-U Series is a family of 16Mbit asynchronous SRAMs organized 1,048,576-word × 16-bit.

The RMLV1616A-U Series realizes higher soft error immunity compared to typical SRAMs with on-chip ECC, achieved by Renesas’ unique Advanced LPSRAM technologies. Therefore, it is suitable for battery backup systems.

It is offered in a 48-pin TSOP (I) or 48-ball fine pitch ball grid array.