封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | TSOP(2) |
| Pkg. Code: | pkg_11889 |
| Lead Count (#): | 52 |
| Pkg. Dimensions (mm): | 11 x 9 x 1 |
| Pitch (mm): | 0.4 |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 3 |
| RoHS (RMWV6416AGSD-5S2#HA0) | 英语日文 |
| Pb (Lead) Free | Yes |
| ECCN (US) | |
| HTS (US) |
产品属性
| Carrier Type | Embossed Tape |
| Moisture Sensitivity Level (MSL) | 3 |
| Country of Assembly | TAIWAN |
| Country of Wafer Fabrication | JAPAN |
| Access Time (ns) | 55 |
| Density (Kb) | 64000 |
| Lead Compliant | Yes |
| Lead Count (#) | 52 |
| Length (mm) | 11 |
| Longevity | 2032 十二月 |
| MOQ | 1000 |
| Memory Capacity (kbit) | 64000 |
| Memory Density | 64 |
| Organization | 4M x 16 |
| Organization (bit) | x 8 / x 16 |
| Organization (kword) | 4000 |
| Pb (Lead) Free | Yes |
| Pkg. Dimensions (mm) | 11 x 9 x 1 |
| Pkg. Type | TSOP(2) |
| Price (USD) | $40.80168 |
| Remarks | Dual Chip Select (CS1#, CS2) |
| Replacement Remark | Generation change with die shrink from 0.15um to 0.11um process |
| Supply Voltage (V) | 2.7 - 3.6 |
| Tape & Reel | No |
| Temp. Range (°C) | -40 to +85 |
| Thickness (mm) | 1 |
| Width (mm) | 9 |
有关 RMWV6416A 的资源
描述
The RMWV6416A is a 64-Mbit static RAM organized 4, 194, 304-word × 16-bit, fabricated by Renesas' high-performance Advanced LPSRAM technologies. The RMWV6416A realizes higher density, higher performance, and low-power consumption. The device offers low-power standby power dissipation. Therefore, it is suitable for battery backup systems. It is offered in a 48-pin TSOP (I), 52-pin µTSOP (II), or 48-ball fine-pitch ball grid array.