封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | STQFN-18 |
| Pkg. Code: | |
| Lead Count (#): | 18 |
| Pkg. Dimensions (mm): | 1.6 x 3.0 mm |
| Pitch (mm): | 0.4 |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 1 |
| ECCN (US) | EAR99 |
| HTS (US) | 8542.39.0090 |
| Pb (Lead) Free | Yes |
产品属性
| Pkg. Type | STQFN-18 |
| Carrier Type | Tape & Reel |
| Moisture Sensitivity Level (MSL) | 1 |
| Country of Assembly | CHINA, TAIWAN |
| Country of Wafer Fabrication | TAIWAN |
| Current Monitor Output | Yes |
| Discharge Circuit | Yes |
| Enable | Active High |
| FET Pass Device Type | Single N-Channel |
| IDS (A) | 6 |
| IDS Channel 1 (A) | 6 |
| Input Quiescent Current Channel 1, max (µA) | 610 |
| Input Quiescent Current Channel 1, typ (µA) | 500 |
| Input Quiescent Current when OFF Channel 1, max (µA) | 3 |
| Input Quiescent Current when OFF Channel 1, typ (µA) | 0.5 |
| Internal TVS Surge Protection | No |
| Lead Count (#) | 18 |
| MOQ | 3000 |
| Output Discharge Circuit | Yes |
| Output Voltage Slew Rate set by | Capacitor |
| Over Current Protection (OCP) | Adjustable |
| Over Current Protection Setting Range Channel 1 | 1 - 7 |
| Over Temperature Protection (OTP) | Yes |
| Over Voltage Protection | Yes |
| Over Сurrent Protection Setting Range (A) | 1 - 7 |
| Pb (Lead) Free | Yes |
| Pitch (mm) | 0.4 |
| Pkg. Dimensions (mm) | 1.6 x 3.0 mm |
| Power Good (PG), FAULT indicator | PG & FAULT |
| Power Monitor Output | No |
| Protection Features | CL, TSD |
| RDSON (Typ) (mΩ) | 13 |
| RDSON (Typ) Channel 1 (mΩ) | 13 |
| Ramp Control | Capacitor |
| Reverse current blocking | No |
| Reverse voltage detection | No |
| Short Circuit Protection | Yes |
| Temp. Range (°C) | -40 to +85°C |
| Undervoltage Protection | Yes |
| VIN Channel 1 max. (V) | 22 |
| VIN Channel 1 min. (V) | 4.5 |
| VIN Range (V) | 4.5 - 22 |
| VIN Range Channel 1 (V) | 4.5 - 22 |
| VIN max. (V) | V22 |
| VIN min. (V) | V4.5 |
| VOUT Discharge Circuit | Yes |
| VOUT Slew-rate Control | Capacitor |
有关 SLG59H1132V 的资源
描述
SLG59H1132V 是一款高性能、自供电 13mΩ NMOS 负载开关，设计用于所有 4.5V 至 22V 电源轨，最高可达 6A。 该SLG59H1132V采用专有的 MOSFET 设计，可在宽输入电压范围内实现稳定的 13mΩ RDSON 。 通过将新颖的 FET 设计和铜柱互连相结合，SLG59H1132V 的封装可以在大电流运行中表现出低热阻。 SLG59H1132V 设计工作温度范围为 -40 °C 至 +85 °C，采用低热阻、符合 RoHS 标准的 1.6mm x 3.0mm STQFN 封装。
