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封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | PQFN88 |
| Pkg. Code: | |
| Lead Count (#): | |
| Pkg. Dimensions (mm): | 8 x 8 |
| Pitch (mm): |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 3 |
| ECCN (US) | EAR99 |
| HTS (US) | 8541.29.0095 |
| Pb (Lead) Free |
产品属性
| Pkg. Type | PQFN88 |
| Carrier Type | Tape & Reel |
| Moisture Sensitivity Level (MSL) | 3 |
| Mounting Type | Surface Mount |
| Temp. Range (°C) | -55 to +150°C |
| Country of Assembly | CHINA |
| Country of Wafer Fabrication | JAPAN |
| Blocking Capability | Uni-Directional Switch |
| Ciss (Typical) (pF) | 588 |
| Coss (Typical) (pF) | 64 |
| FET Type | N-Channel |
| Id max @ 25°C (A) | 29 |
| Pkg. Dimensions (mm) | 8 x 8 |
| Qg typ (nC) | 11 |
| Qoss (nC) | 64 |
| Qualification Level | Standard |
| Quality Level | Standard |
| RDSON (Typ) (mΩ) | 72 |
| RDSON (max) (mΩ) | 85 |
| Ron * Qoss (FOM) | 4608 |
| V(TR)DSS max (V) | 800 |
| Vds min (V) | 650 |
| Vth typ (V) | 4 |
| trr (Typical) (nS) | 47 |
| 已发布 | Yes |
有关 TP65H070G4LSGBEA 的资源
描述
The TP65H070G4LSGBEA 650V, 70mΩ, Gallium Nitride (GaN) FET is a normally-off device using Renesas’ Gen IV SuperGaN® platform. It integrates high-voltage GaN High Electron Mobility Transistor (HEMT) and low-voltage silicon MOSFET technologies, providing superior reliability and performance. Renesas GaN achieves higher efficiency than silicon by minimizing gate charge, crossover loss, and reverse recovery charge. The TP65H070G4LSGBEA is available in a PQFN88 8-pin industry package with a common-source configuration.