封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | PQFN88 |
| Pkg. Code: | |
| Lead Count (#): | |
| Pkg. Dimensions (mm): | 8 x 8 |
| Pitch (mm): |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 3 |
| ECCN (US) | EAR99 |
| HTS (US) | 8541.29.0095 |
| Pb (Lead) Free |
产品属性
| Pkg. Type | PQFN88 |
| Carrier Type | Tape & Reel |
| Moisture Sensitivity Level (MSL) | 3 |
| Mounting Type | Surface Mount |
| Temp. Range (°C) | -55 to +150°C |
| Blocking Capability | Uni-Directional Switch |
| Ciss (Typical) (pF) | 818 |
| Coss (Typical) (pF) | 53 |
| FET Type | N-Channel |
| Id max @ 25°C (A) | 18.9 |
| Pkg. Dimensions (mm) | 8 x 8 |
| Qg typ (nC) | 14.4 |
| Qoss (nC) | 56 |
| Qualification Level | Standard |
| RDSON (Typ) (mΩ) | 92 |
| RDSON (max) (mΩ) | 110 |
| Ron * Qoss (FOM) | 5152 |
| V(TR)DSS max (V) | 800 |
| Vds min (V) | 650 |
| Vth typ (V) | 3.65 |
| trr (Typical) (nS) | 17 |
有关 TP65H100G4LSGB 的资源
描述
The TP65H100G4LSGB 650V 92mΩ Gallium Nitride (GaN) FET is a normally-off device built using Renesas Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Renesas GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H100G4LSGB is offered in an industry-standard PQFN88 with a Kelvin source and common source package configuration.
