封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | PQFN88 |
| Pkg. Code: | |
| Lead Count (#): | |
| Pkg. Dimensions (mm): | 8 x 8 |
| Pitch (mm): |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 3 |
| ECCN (US) | EAR99 |
| HTS (US) | 8541.49.7040 |
| Pb (Lead) Free |
产品属性
| Pkg. Type | PQFN88 |
| Carrier Type | Tape & Reel |
| Moisture Sensitivity Level (MSL) | 3 |
| Mounting Type | Surface Mount |
| Temp. Range (°C) | -55 to +150°C |
| Country of Assembly | CHINA |
| Country of Wafer Fabrication | JAPAN |
| Ciss (Typical) (pF) | 1160 |
| Coss (Typical) (pF) | 28 |
| FET Type | N-Channel |
| Id max @ 25°C (A) | 14.2 |
| Pkg. Dimensions (mm) | 8 x 8 |
| Price (USD) | $1.6218 |
| Qg typ (nC) | 14 |
| Qoss (nC) | 35 |
| Qualification Level | Standard |
| RDSON (Typ) (mΩ) | 150 |
| RDSON (max) (mΩ) | 180 |
| Ron * Qoss (FOM) | 5250 |
| V(TR)DSS max (V) | 800 |
| Vds min (V) | 650 |
| Vth typ (V) | 1.6 |
| trr (Typical) (nS) | 32 |
有关 TP65H150G4LSGBE 的资源
描述
The TP65H150G4LSGBE 650V 150mΩ Gallium Nitride (GaN) FET, housed in an 8x8 PQFN industry-standard package, is a normally-off device built on Renesas' Gen IV SuperGaN® platform. It integrates a high-voltage GaN HEMT with an optimized low-voltage silicon MOSFET, delivering exceptional performance, standard drive compatibility, ease of adoption, and enhanced reliability.