特性
- 150mOhm, 650V GaN Device in PQFN 8x8 industry package
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design defined by:
- 800V transient over-voltage capability
- Operation with E-mode Gate drivers without the need for Zener protection
- Low QRR
- Reduced crossover loss
- Achieves increased efficiency in both hard-switched and soft-switched circuits, enabling:
- Increased power density
- Reduced system size and weight
- Overall reduction in system cost
描述
The TP65H150G4LSGBE 650V 150mΩ Gallium Nitride (GaN) FET, housed in an 8x8 PQFN industry-standard package, is a normally-off device built on Renesas' Gen IV SuperGaN® platform. It integrates a high-voltage GaN HEMT with an optimized low-voltage silicon MOSFET, delivering exceptional performance, standard drive compatibility, ease of adoption, and enhanced reliability.
产品参数
| 属性 | 值 |
|---|---|
| Qualification Level | Standard |
| Vds min (V) | 650 |
| V(TR)DSS max (V) | 800 |
| RDSON (Typ) (mΩ) | 150 |
| RDSON (max) (mΩ) | 180 |
| Vth typ (V) | 1.6 |
| Id max @ 25°C (A) | 14.2 |
| Qrr typ (nC) | 0 |
| Qg typ (nC) | 14 |
| Qoss (nC) | 35 |
| Ron * Qoss (FOM) | 5250 |
| Ciss (Typical) (pF) | 1160 |
| Coss (Typical) (pF) | 28 |
| trr (Typical) (nS) | 32 |
| Mounting Type | Surface Mount |
| Temp. Range (°C) | -55 to +150°C |
封装选项
| Pkg. Type | Pkg. Dimensions (mm) |
|---|---|
| PQFN88 | 8 x 8 |
应用方框图
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140W-240W 双端口 USB Type-C 和 USB PD 充电器
这款 USB 充电器系统可提供高达 240W 的功率，实现快速灵活的双 USB-C 充电，并具有强大的安全防护机制。
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其他应用
- Consumer
- Power adapters
- Low power SMPS
- Lighting
- POE Power