封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | PQFN56 |
| Pkg. Code: | |
| Lead Count (#): | |
| Pkg. Dimensions (mm): | 5 x 6 |
| Pitch (mm): |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 3 |
| ECCN (US) | EAR99 |
| HTS (US) | 8541.29.0095 |
| Pb (Lead) Free |
产品属性
| Pkg. Type | PQFN56 |
| Carrier Type | Tape & Reel |
| Moisture Sensitivity Level (MSL) | 3 |
| Mounting Type | Surface Mount |
| Temp. Range (°C) | -55 to +150°C |
| Country of Assembly | CHINA |
| Country of Wafer Fabrication | JAPAN |
| Blocking Capability | Uni-Directional Switch |
| Ciss (Typical) (pF) | 465 |
| Coss (Typical) (pF) | 8 |
| FET Type | N-Channel |
| Id max @ 25°C (A) | 5 |
| Pkg. Dimensions (mm) | 5 x 6 |
| Price (USD) | $0.6885 |
| Qg typ (nC) | 5.2 |
| Qoss (nC) | 9.2 |
| Qrr typ (nC) | 5.2 |
| Qualification Level | Standard |
| RDSON (Typ) (mΩ) | 480 |
| RDSON (max) (mΩ) | 560 |
| Ron * Qoss (FOM) | 4416 |
| V(TR)DSS max (V) | 800 |
| Vds min (V) | 700 |
| Vth typ (V) | 2 |
| trr (Typical) (nS) | 27.6 |
有关 TP70H480G4JSGB 的资源
描述
The TP70H480G4JSGB 700V, 480mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas' Gen IV SuperGaN® platform. It combines high-voltage GaN HEMT with an optimized low-voltage silicon MOSFET, featuring over 2kV ESD protection, to deliver exceptional performance and reliability.
Renesas' Gen IV SuperGaN platform uses advanced epitaxial and patented design technologies to simplify manufacturing while improving efficiency compared to silicon. These advancements are achieved through reduced gate charge, lower output capacitance, minimized crossover loss, and decreased reverse recovery charge.