概览
描述
MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.
特性
- N-channel 2.5V, P-channel 1.8V drive available
- Low on-state resistance
N-channel
RDS(on)1 = 42 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A)
RDS(on)2 = 62 mΩ MAX. (VGS = 2.5 V, ID = 2.0 A)
P-channel
RDS(on)1 = 79 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)
RDS(on)2 = 105 mΩ MAX. (VGS = –2.5 V, ID = –1.5 A)
RDS(on)3 = 182 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A) - Built-in gate protection diode
- Lead-free and Halogen-free
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应用
设计和开发
模型
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