特性
- Low on-state resistance
RDS(on)1 = 6.6 mΩ MAX. (VGS = 10 V, ID = 7 A)
RDS(on)2 = 14 mΩ MAX. (VGS = 5.0 V, ID = 7 A) - Low input capacitance
Ciss = 3600 pF TYP. (VDS = 10 V, VGS = 0 V) - Built-in gate protection diode
- Small and surface mount package (Power SOP8)
- RoHS Compliant
描述
MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.
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