特性
- Digital compensation of sensor offset, sensitivity, temperature drift, and non-linearity
- Accommodates nearly all bridge sensors by PGA and programmable ADC
- Capable of conditioning bridge sensor signals ranging from 1mV/V to 275mV/V
- Set of diagnostics functions needed for safety applications
- Temperature compensation via internal diode, external diode or bridge sensor element
- Output options: voltage (0 to 5V), I2C, ZACwire™ (one-wire interface)
- Adjustable ADC resolution (13 to 16 bits) versus sampling rate (up to 7.8kHz)
- High DAC resolution of 12-bit
- Selectable bridge excitation: ratiometric voltage or constant current
- Operation temperature range of (-40 °C to +125 °C or (-40 °C to +150 °C
- Supply voltage: 4.5V to +5.5V
- Available as DFN14, SSOP14, or die
描述
The ZSC31150 is a CMOS integrated circuit for amplification and sensor-specific correction of bridge sensor signals. The device provides digital compensation of sensor offset, sensitivity, temperature drift, and non-linearity via a 16-bit RISC microcontroller running a correction algorithm. The ZSC31150 accommodates virtually any resistive bridge sensor (e.g., piezoresistive and steel-membrane-based pressure sensors). The bi-directional digital interfaces (I2C and ZACwire™) can be used for a simple PC-controlled calibration procedure, encompassing writing and programming a set of calibration coefficients into an on-chip EEPROM. The ZSC31150 has been designed for automotive applications and is specifically suited for most pressure sensors. It can also be used with force, torque, acceleration, angle, position, and revolution sensors. Safety applications (e.g., braking or steering systems) are also supported by the ZSC31150's set of diagnostic functions. The ZSC31150 is optimized for automotive environments via protection circuitry and excellent electromagnetic compatibility.
产品参数
| 属性 | 值 |
|---|---|
| Function | Resistive SSC |
| Automotive Qual. | Yes |
| Supply Voltage (V) | 4.5 - 5.5 |
| Input Type | Single-bridge |
| Interface | Ratiometric Voltage, ZACwire™, I2C |
| Adj. Analog Gain | 3 - 3, 7 - 7, 9 - 9, 14 - 14, 26 - 26, 35 - 35, 52 - 52, 70 - 70, 105 - 105, 140 - 140, 210 - 210, 280 - 280, 420 - 420 |
| Resolution (bits) | 16 |
| Sample Rate Max (KHz) | 7.8 |
| Temp. Range (°C) | -40 to +150°C, -40 to 125°C, -40 to 150°C |
| Part Number | Status | Samples | Stock | Package | Budgetary Price (USD) | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pitch (mm) | Pkg. Dimensions (mm) | Qty. per Reel (#) | Package Area (mm²) | Qty. per Carrier (#) | Pb (Lead) Free | Pb Free Category | Temp. Range (°C) | Country of Assembly | Country of Wafer Fabrication |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ZSC31150GAG1-R | Active | Available | In Stock | SSOP | 1ku | $3.29 | 14# | Reel | 1 | 0.65mm | 6.2 x 5.3 x 1.73 | 2000# | 32.9mm² | 0 | Yes | e3 Sn | -40 to 125°C | PHILIPPINES | GERMANY |
| ZSC31150GAG2-R | Active | Available | Out of Stock | DFN | 1ku | $3.29 | 14# | Reel | 1 | 0.5mm | 5.0 x 4.0 x 0.9 | 5000# | 20mm² | 0 | Yes | e3 Sn | -40 to 125°C | THAILAND | GERMANY |
| ZSC31150GEC | Active | N/A | Out of Stock | WAFER | 1ku | $3.05 | 0 | Wafer | 1 | 0.0 x 0.0 x 0.0 | 0 | 0 | Yes | e3 Sn | -40 to +150°C | GERMANY | |||
| ZSC31150GEG1-R | Active | Available | In Stock | SSOP | 1ku | $3.32 | 14# | Reel | 1 | 0.65mm | 6.2 x 5.3 x 1.73 | 2000# | 32.9mm² | 0 | Yes | e3 Sn | -40 to 150°C | PHILIPPINES | GERMANY |
| ZSC31150GAG1-T | NRND | Available | In Stock | SSOP | 1ku | $3.29 | 14# | Tube | 1 | 0.65mm | 6.2 x 5.3 x 1.73 | 0 | 32.9mm² | 77# | Yes | e3 Sn | -40 to 125°C | PHILIPPINES | GERMANY |
| ZSC31150GEB | NRND | N/A | Out of Stock | WAFER | 1ku | $3.05 | 0 | Wafer | 1 | 0.0 x 0.0 x 0.0 | 0 | 0 | Yes | e3 Sn | -40 to 150°C | GERMANY | |||
| ZSC31150GED | NRND | Available | Out of Stock | WAFER | 1ku | $4.8 | 0 | WFP | 1 | 0.0 x 0.0 x 0.0 | 0 | 0 | Yes | e3 Sn | -40 to 150°C | GERMANY | |||
| ZSC31150GEG1-T | NRND | N/A | In Stock | SSOP | 1ku | $3.32 | 14# | Tube | 1 | 0.65mm | 6.2 x 5.3 x 1.73 | 0 | 32.9mm² | 77# | Yes | e3 Sn | -40 to 150°C | PHILIPPINES | GERMANY |
| ZSC31150GEG2-R | NRND | Available | Out of Stock | DFN | 1ku | $3.4 | 14# | Reel | 1 | 0.5mm | 5.0 x 4.0 x 0.9 | 5000# | 20mm² | 0 | Yes | e3 Sn | -40 to 150°C | THAILAND | GERMANY |
| ZSC31150GLG1-R | Obsolete | N/A | Out of Stock | SSOP | 14# | Reel | 1 | 0.65mm | 6.2 x 5.3 x 1.73 | 2000# | 32.9mm² | 0 | Yes | e3 Sn | -40 to 150°C | |||
| ZSC31150GLG1-T | Obsolete | N/A | Out of Stock | SSOP | 14# | Tube | 1 | 0.65mm | 6.2 x 5.3 x 1.73 | 0 | 32.9mm² | 77# | Yes | e3 Sn | -40 to 150°C |
- 应用说明英语AI 生成的摘要: Automotive pressure sensor modules have no effective RF antenna below 1 GHz due to their small size; the harness acts as the primary antenna. EMC tests, especially Bulk Current Injection (BCI), simulate RF interference from vehicle wiring. Module design must consider parasitic capacitances and galvanic contacts between the case, pressure supply adapter, and chassis. Plastic cases maximize parasitic impedances, reducing susceptibility, while metallic cases require low-impedance RF current paths and shielding. Designs must balance EMC robustness, manufacturing tolerances, and cost, with increasing test frequencies up to 3 GHz necessitating additional shielding.
- 应用说明英语PDF 570 KB 7WDXRDKU4E7E-5-60554 2016年4月26日
- 应用说明英语PDF 427 KB 7WDXRDKU4E7E-5-60552 2016年4月26日
- 应用说明英语
- 指南英语7Z 1.21 MB 7WDXRDKU4E7E-5-60872 2021年8月20日
- 其他英语XLS 376 KB 7WDXRDKU4E7E-5-60287 2015年11月20日
推荐文档 (1)
数据手册 (1)
- 指南英语7Z 1.21 MB 7WDXRDKU4E7E-5-60872 2021年8月20日
手册和指南 (3)
- 应用说明英语AI 生成的摘要: Automotive pressure sensor modules have no effective RF antenna below 1 GHz due to their small size; the harness acts as the primary antenna. EMC tests, especially Bulk Current Injection (BCI), simulate RF interference from vehicle wiring. Module design must consider parasitic capacitances and galvanic contacts between the case, pressure supply adapter, and chassis. Plastic cases maximize parasitic impedances, reducing susceptibility, while metallic cases require low-impedance RF current paths and shielding. Designs must balance EMC robustness, manufacturing tolerances, and cost, with increasing test frequencies up to 3 GHz necessitating additional shielding.
- 应用说明英语PDF 570 KB 7WDXRDKU4E7E-5-60554 2016年4月26日
- 应用说明英语PDF 427 KB 7WDXRDKU4E7E-5-60552 2016年4月26日
- 应用说明英语
应用说明和白皮书 (4)
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